Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

C. Couso; V. Iglesias; M. Porti; S. Claramunt; M. Nafría; N. Domingo; A. Cordes; G. Bersuker

doi:10.1109/LED.2016.2537051

Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

C. Couso, V. Iglesias, M. Porti, S. Claramunt, M. Nafría, N. Domingo, A. Cordes, G. Bersuker

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The stacks of III-V materials, grown on the Si substrate, that are considered for the fabrication of highly scaled devices tend to develop structural defects, in particular threading dislocations (TDs), which affect device electrical properties. We demonstrate that the characteristics of the TD sites can be analyzed by using the conductive atomic force microscopy technique with nanoscale spatial resolution within a wide temperature range. In the studied InGaAs/Si stacks, electrical conductance through the TD sites was found to be governed by the Poole-Frenkel emission, while the off-TDs conductivity is dominated by the thermionic emission process.

Original language	English
Article number	7422696
Pages (from-to)	640-643
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	5
DOIs	https://doi.org/10.1109/LED.2016.2537051
State	Published - May 2016
Externally published	Yes

Funding

This work was supported in part by the Departament d'Universitats, Recerca i Societat de la Informació within the Generalitat de Catalunya under Grant 2014SGR-384 and in part by the Ministerio de Economía y Competitividad and the Secretaría de Estado de Investigación, Desarrollo e Innovación through the European Regional Development Fund under Grant TEC2013-45638-C3-1-R.

Funders	Funder number
Desarrollo e Innovación
Secretaría de Estado de Investigación
Generalitat de Catalunya	2014SGR-384
Ministerio de Economía y Competitividad
Departament d'Universitats, Recerca i Societat de la Informació
European Regional Development Fund	TEC2013-45638-C3-1-R

Keywords

CAFM
Poole Frenkel emission
semiconductor defects
thermionic emission
threading dislocation

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10.1109/LED.2016.2537051

Cite this

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abstract = "The stacks of III-V materials, grown on the Si substrate, that are considered for the fabrication of highly scaled devices tend to develop structural defects, in particular threading dislocations (TDs), which affect device electrical properties. We demonstrate that the characteristics of the TD sites can be analyzed by using the conductive atomic force microscopy technique with nanoscale spatial resolution within a wide temperature range. In the studied InGaAs/Si stacks, electrical conductance through the TD sites was found to be governed by the Poole-Frenkel emission, while the off-TDs conductivity is dominated by the thermionic emission process.",

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AU - Claramunt, S.

AU - Nafría, M.

AU - Domingo, N.

AU - Cordes, A.

AU - Bersuker, G.

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AB - The stacks of III-V materials, grown on the Si substrate, that are considered for the fabrication of highly scaled devices tend to develop structural defects, in particular threading dislocations (TDs), which affect device electrical properties. We demonstrate that the characteristics of the TD sites can be analyzed by using the conductive atomic force microscopy technique with nanoscale spatial resolution within a wide temperature range. In the studied InGaAs/Si stacks, electrical conductance through the TD sites was found to be governed by the Poole-Frenkel emission, while the off-TDs conductivity is dominated by the thermionic emission process.

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Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

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Keywords

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