Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating

Jaesung Son; Karan Banerjee; Matthew Brahlek; Nikesh Koirala; Seoung Ki Lee; Jong Hyun Ahn; Seongshik Oh; Hyunsoo Yang

doi:10.1063/1.4833315

Conductance modulation in topological insulator Bi₂Se ₃ thin films with ionic liquid gating

Jaesung Son, Karan Banerjee, Matthew Brahlek, Nikesh Koirala, Seoung Ki Lee, Jong Hyun Ahn, Seongshik Oh, Hyunsoo Yang

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

A Bi₂Se₃ topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

Original language	English
Article number	213114
Journal	Applied Physics Letters
Volume	103
Issue number	21
DOIs	https://doi.org/10.1063/1.4833315
State	Published - Nov 18 2013
Externally published	Yes

Funding

This work was partially supported by the Singapore Ministry of Education Academic Research Fund Tier 1 (R-263-000-A75-750), the National Research Foundation of Korea (NRF) grants funded by the Korean Government (2012R1A2A1A03006049) and by NSF DMR-0845464 and ONR N000141210456 at Rutgers.

Funders	Funder number
National Science Foundation	DMR-0845464
Office of Naval Research	N000141210456
Directorate for Mathematical and Physical Sciences	0845464
Ministry of Education - Singapore	R-263-000-A75-750
National Research Foundation of Korea	2012R1A2A1A03006049

Access to Document

10.1063/1.4833315

Cite this

@article{66169a84eebd4b989548a57a03474523,

title = "Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating",

abstract = "A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.",

author = "Jaesung Son and Karan Banerjee and Matthew Brahlek and Nikesh Koirala and Lee, {Seoung Ki} and Ahn, {Jong Hyun} and Seongshik Oh and Hyunsoo Yang",

year = "2013",

month = nov,

day = "18",

doi = "10.1063/1.4833315",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating

AU - Son, Jaesung

AU - Banerjee, Karan

AU - Brahlek, Matthew

AU - Koirala, Nikesh

AU - Lee, Seoung Ki

AU - Ahn, Jong Hyun

AU - Oh, Seongshik

AU - Yang, Hyunsoo

PY - 2013/11/18

Y1 - 2013/11/18

N2 - A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

AB - A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

UR - http://www.scopus.com/inward/record.url?scp=84888421563&partnerID=8YFLogxK

U2 - 10.1063/1.4833315

DO - 10.1063/1.4833315

M3 - Article

AN - SCOPUS:84888421563

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 213114

ER -

Conductance modulation in topological insulator Bi₂Se ₃ thin films with ionic liquid gating

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this