Abstract
The discovery of novel materials through first-principles calculations is an exciting and rapidly advancing frontier in materials science. In this study, we predict three novel layered Sc-based MOenes (Sc2OCl2, Sc2OBr2, and Sc2OI2), employing a variable-composition evolutionary algorithm combined with the first-principles calculations. The predicted bulk materials are thermodynamically and thermally stable. We have also examined the cleavage energy and the electronic and phonon dispersions of the monolayers. Our cleavage energy calculations indicate easy exfoliation of monolayers from their bulk counterparts. Monolayer Sc2OCl2 and Sc2OBr2 demonstrate dynamic stability, while monolayer Sc2OI2 shows instability at the X high symmetry point. Our calculations show that bulk Sc2OX2 are semiconductors with a band gap ranging from 0.51 eV (Sc2OCl2) to 0.59 eV (Sc2OI2). A slight increase in the band gap is observed for the monolayers of Sc2OBr2 and Sc2OI2. Our findings reveal that at a n-type doping concentration of 2×1021 cm−3, bulk Sc2OCl2 has a room temperature electrical conductivity of 4.87×105 Sm−1, followed by bulk Sc2OBr2 (3.64×105 Sm−1) and bulk Sc2OI2 (4.89×105 Sm −1). The bulk Sc2OCl2 halide demonstrate room temperature lattice thermal conductivity of 8.7 Wm−1K−1, significantly surpassing bulk Sc2OBr2 (4.6 Wm−1K−1) and bulk Sc2OI2 (2.8 Wm−1K−1). These results highlight the crucial role of halogen atomic mass in governing thermal transport. We present these moderate to lightweight Sc-based MOenes compounds as promising candidates for further computational and experimental investigations, with the potential to uncover new physics in materials.
| Original language | English |
|---|---|
| Article number | 114304 |
| Journal | Computational Materials Science |
| Volume | 261 |
| DOIs | |
| State | Published - Jan 2026 |
| Externally published | Yes |
Funding
The Authors acknowledge the financial support from Khalifa University of Science and Technology, United Arab Emirates under the grant RIG-2023-01 (Grant number 8474000554 ) and research computing facilities (Almesbar) for the results of this research. G. S. thanks Dr. Raja Sen from École Polytechnique and Dr. Ankit from IISER Pune for the valuable and insightful discussions.
Keywords
- Evolutionary algorithm
- MOenes
- Materials discovery
- Semiconductors
- Thermal conductivity
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