Composition Dependence of Raman Bands in Amorphous AsxSe100−x

V. I. Mikla, A. A. Baganich, A. P. Sokolov, A. P. Shebanin

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Raman scattering spectra are studied for Se‐rich amorphous semiconductors AsSe. By comparing peak width, peak position, and Raman intensity in the range of bond modes it is derived that the changes occur not monotonically with increasing As content. The change of the spectra is explained as due to cross linking Se chains.

Original languageEnglish
Pages (from-to)281-286
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume175
Issue number1
DOIs
StatePublished - Jan 1 1993
Externally publishedYes

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