Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography

Bastien Bonef, Miguel Lopez-Haro, Lynda Amichi, Mark Beeler, Adeline Grenier, Eric Robin, Pierre Henri Jouneau, Nicolas Mollard, Isabelle Mouton, Eva Monroy, Catherine Bougerol

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The enhancement of the performance of advanced nitride-based optoelectronic devices requires the fine tuning of their composition, which has to be determined with a high accuracy and at the nanometer scale. For that purpose, we have evaluated and compared energy dispersive X-ray spectroscopy (EDX) in a scanning transmission electron microscope (STEM) and atom probe tomography (APT) in terms of composition analysis of AlGaN/GaN multilayers. Both techniques give comparable results with a composition accuracy better than 0.6 % even for layers as thin as 3 nm. In case of EDX, we show the relevance of correcting the X-ray absorption by simultaneous determination of the mass thickness and chemical composition at each point of the analysis. Limitations of both techniques are discussed when applied to specimens with different geometries or compositions.

Original languageEnglish
Article number461
JournalNanoscale Research Letters
Volume11
Issue number1
DOIs
StatePublished - Dec 1 2016
Externally publishedYes

Keywords

  • Atom probe tomography
  • Energy dispersive X-ray spectroscopy
  • III-Nitride nanostructures
  • Nanoscale composition analysis
  • Quantitative composition analysis

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