Abstract
The interface response functions for rapid solidification of a non-dilute binary alloy were measured in the regime of partial solute trapping, where substantial discrepancies exist among predictions for the interfacial undercooling in various models. We used pulsed laser melting of Si-As on insulating substrates to enforce planar solidification spanning the velocity range 0.2-2 m/s. Nanosecond-resolution electrical measurements of the time-dependent melt depth and of the electrical resistivity of a buried Pt thin film thermometer permitted us to determine the solidification velocity and the temperature of the crystal/melt interface. With composition-depth profile measurements we also determined the nonequilibrium partition coefficient. The measured velocity-dependence of the interface temperature and partition coefficient are quantitatively consistent with the continuous growth model without solute drag of M. J. Aziz and T. Kaplan and are qualitatively and quantitatively inconsistent with all models exhibiting a significant solute drag effect. Elements of a potential explanation are proposed using the solute drag model of M. Hillert and B. Sundman to investigate the origin of the solute drag effect in terms of irreversible processes occurring within a diffuse interface.
| Original language | English |
|---|---|
| Pages (from-to) | 4797-4811 |
| Number of pages | 15 |
| Journal | Acta Materialia |
| Volume | 48 |
| Issue number | 20 |
| DOIs | |
| State | Published - Dec 4 2000 |
| Externally published | Yes |
Funding
This research was supported initially by NSF-DMR-92-08931 and subsequently by NSF-DMR-97-27369. We thank Yucong Huang for performing some of the heat-flow simulations used to corroborate our interpretation of the data.
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