Competing phases in epitaxial vanadium dioxide at nanoscale

Yogesh Sharma; Martin V. Holt; Nouamane Laanait; Xiang Gao; Ilia N. Ivanov; Liam Collins; Changhee Sohn; Zhaoliang Liao; Elizabeth Skoropata; Sergei V. Kalinin; Nina Balke; Gyula Eres; Thomas Z. Ward; Ho Nyung Lee

doi:10.1063/1.5115784

Competing phases in epitaxial vanadium dioxide at nanoscale

Yogesh Sharma, Martin V. Holt, Nouamane Laanait, Xiang Gao, Ilia N. Ivanov, Liam Collins, Changhee Sohn, Zhaoliang Liao, Elizabeth Skoropata, Sergei V. Kalinin, Nina Balke, Gyula Eres, Thomas Z. Ward, Ho Nyung Lee

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, the correlated vanadium dioxide (VO₂) exhibits a strong competition between insulating and metallic phases, which is important for practical applications. However, the phase boundary undergoes a strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of nanoscale M2 phase domains in VO₂ epitaxial films under anisotropic strain relaxation. The competing phases of the films are imaged by multilength-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates the critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO₂ films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO₂ films.

Original language	English
Article number	081127
Journal	APL Materials
Volume	7
Issue number	8
DOIs	https://doi.org/10.1063/1.5115784
State	Published - Aug 1 2019

Funding

This work was supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), Materials Sciences and Engineering Division (synthesis, microstructural characterization, and scanning probes), and as part of the Computational Materials Sciences Program (structural characterization). Raman measurements were performed as user projects at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, BES, U.S. DOE. N.L. Acknowledges funding from the Eugene P. Wigner Fellowship at Oak Ridge National Laboratory. Use of the Center for Nanoscale Materials and the Advanced Photon Source, both Office of Science user facilities, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Grant No. DE-AC02-06CH11357.

Funders	Funder number
Advanced Photon Source
U.S. Department of Energy
Office of Science
Basic Energy Sciences	DE-AC02-06CH11357
Oak Ridge National Laboratory
Division of Materials Sciences and Engineering

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title = "Competing phases in epitaxial vanadium dioxide at nanoscale",

abstract = "Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, the correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases, which is important for practical applications. However, the phase boundary undergoes a strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of nanoscale M2 phase domains in VO2 epitaxial films under anisotropic strain relaxation. The competing phases of the films are imaged by multilength-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates the critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO2 films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO2 films.",

author = "Yogesh Sharma and Holt, {Martin V.} and Nouamane Laanait and Xiang Gao and Ivanov, {Ilia N.} and Liam Collins and Changhee Sohn and Zhaoliang Liao and Elizabeth Skoropata and Kalinin, {Sergei V.} and Nina Balke and Gyula Eres and Ward, {Thomas Z.} and Lee, {Ho Nyung}",

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AU - Collins, Liam

AU - Sohn, Changhee

AU - Liao, Zhaoliang

AU - Skoropata, Elizabeth

AU - Kalinin, Sergei V.

AU - Balke, Nina

AU - Eres, Gyula

AU - Ward, Thomas Z.

AU - Lee, Ho Nyung

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Competing phases in epitaxial vanadium dioxide at nanoscale

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