Comparison of electrical properties of SrBi2Ta2O9/CeO2/Si and SrBi2Ta2O9/Si structures

Dong Suk Shin; Yong Hee Han; In Hoon Choi; Ho Nyung Lee; Yong Tae Kim

Comparison of electrical properties of SrBi₂Ta₂O₉/CeO₂/Si and SrBi₂Ta₂O₉/Si structures

Dong Suk Shin
, Yong Hee Han
, In Hoon Choi
, Ho Nyung Lee
, Yong Tae Kim

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The comparison in electrical properties of Pt/Sr_0.75Bi_2.4Ta₂O₉(SBT)/CeO ₂/Si (MFIS) and Pt/SBT/Si (MFS) stuctures have been investigated for the gate oxide of nondestructive read out-ferroelectric memory. For Pt/SBT/CeO₂/Si thin film structure, interfaces of SBT/CeO₂ and CeO₂/Si are clean from high resolution transmission electron microscopy (HRTEM). Memory windows of the MFIS structure are in the range of 1̃2 V at capacitance-voltage characteristics. On the other hand, MFS structure have much smaller memory window (0.3 V) at high voltage due to a poor interface, which is the mixed region of SBT and Si. Leakage current of Pt/SBT/CeO₂/Si structure is about one order lower than SBT/Si structure. Consequently, SBT/CeO₂/Si is a promising gate structure for NDRO-FRAM.

Original language	English
Pages (from-to)	S1414-S1416
Journal	Journal of the Korean Physical Society
Volume	32
Issue number	4 SUPPL.
State	Published - 1998
Externally published	Yes

Cite this

@article{2d858474b9c14dde81aab88406837f51,

title = "Comparison of electrical properties of SrBi2Ta2O9/CeO2/Si and SrBi2Ta2O9/Si structures",

abstract = "The comparison in electrical properties of Pt/Sr0.75Bi2.4Ta2O9(SBT)/CeO 2/Si (MFIS) and Pt/SBT/Si (MFS) stuctures have been investigated for the gate oxide of nondestructive read out-ferroelectric memory. For Pt/SBT/CeO2/Si thin film structure, interfaces of SBT/CeO2 and CeO2/Si are clean from high resolution transmission electron microscopy (HRTEM). Memory windows of the MFIS structure are in the range of {\~1}2 V at capacitance-voltage characteristics. On the other hand, MFS structure have much smaller memory window (0.3 V) at high voltage due to a poor interface, which is the mixed region of SBT and Si. Leakage current of Pt/SBT/CeO2/Si structure is about one order lower than SBT/Si structure. Consequently, SBT/CeO2/Si is a promising gate structure for NDRO-FRAM.",

author = "Shin, \{Dong Suk\} and Han, \{Yong Hee\} and Choi, \{In Hoon\} and Lee, \{Ho Nyung\} and Kim, \{Yong Tae\}",

year = "1998",

language = "English",

volume = "32",

pages = "S1414--S1416",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Springer",

number = "4 SUPPL.",

}

TY - JOUR

T1 - Comparison of electrical properties of SrBi2Ta2O9/CeO2/Si and SrBi2Ta2O9/Si structures

AU - Shin, Dong Suk

AU - Han, Yong Hee

AU - Choi, In Hoon

AU - Lee, Ho Nyung

AU - Kim, Yong Tae

PY - 1998

Y1 - 1998

N2 - The comparison in electrical properties of Pt/Sr0.75Bi2.4Ta2O9(SBT)/CeO 2/Si (MFIS) and Pt/SBT/Si (MFS) stuctures have been investigated for the gate oxide of nondestructive read out-ferroelectric memory. For Pt/SBT/CeO2/Si thin film structure, interfaces of SBT/CeO2 and CeO2/Si are clean from high resolution transmission electron microscopy (HRTEM). Memory windows of the MFIS structure are in the range of 1̃2 V at capacitance-voltage characteristics. On the other hand, MFS structure have much smaller memory window (0.3 V) at high voltage due to a poor interface, which is the mixed region of SBT and Si. Leakage current of Pt/SBT/CeO2/Si structure is about one order lower than SBT/Si structure. Consequently, SBT/CeO2/Si is a promising gate structure for NDRO-FRAM.

AB - The comparison in electrical properties of Pt/Sr0.75Bi2.4Ta2O9(SBT)/CeO 2/Si (MFIS) and Pt/SBT/Si (MFS) stuctures have been investigated for the gate oxide of nondestructive read out-ferroelectric memory. For Pt/SBT/CeO2/Si thin film structure, interfaces of SBT/CeO2 and CeO2/Si are clean from high resolution transmission electron microscopy (HRTEM). Memory windows of the MFIS structure are in the range of 1̃2 V at capacitance-voltage characteristics. On the other hand, MFS structure have much smaller memory window (0.3 V) at high voltage due to a poor interface, which is the mixed region of SBT and Si. Leakage current of Pt/SBT/CeO2/Si structure is about one order lower than SBT/Si structure. Consequently, SBT/CeO2/Si is a promising gate structure for NDRO-FRAM.

UR - https://www.scopus.com/pages/publications/0032396720

M3 - Article

AN - SCOPUS:0032396720

SN - 0374-4884

VL - 32

SP - S1414-S1416

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 4 SUPPL.

ER -

Comparison of electrical properties of SrBi₂Ta₂O₉/CeO₂/Si and SrBi₂Ta₂O₉/Si structures

Abstract

Other files and links

Fingerprint

Cite this