Abstract
Characterization studies of Cd1-xZnxTe (0<x<0.24) crystals, CZT, grown by high pressure vertical Bridgman (HPVB), low pressure (LPB) vertical modified Bridgman (VB), horizontal modified Bridgman (HB), and physical vapor deposition (PVD) methods were performed. For selected melt-grown ingots, the liquid/solid segregation coefficients of some of the impurities were established. For most of the crystals, the surface and the bulk crystallinity were determined using triple and double axis X-ray diffraction techniques (TAD and DAD XRD). X-ray topography maps were also used to study macroscopic defects. The difference in properties of CZT grown by these methods are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 235-241 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 231 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Sep 2001 |
| Externally published | Yes |
Funding
The co-authors from Sandia acknowledge support from the DOE Office of non-proliferation and National security and DOE initiatives for proliferation prevention. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under Contract DE-AC04-94AL85000.
Keywords
- A1. Impurities
- A1. Segregation
- A1. X-ray diffraction
- A1. X-ray topography
- A2. Bridgman technique
- B1. Cadmium compounds
- B2. Semiconducting II-IV materials