TY - GEN
T1 - Comparison of 22 kHz and 85 kHz 50 kW Wireless Charging System Using Si and SiC Switches for Electric Vehicle
AU - Haque, Moinul Shahidul
AU - Mohammad, Mostak
AU - Pries, Jason L.
AU - Choi, Seungdeog
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/12/7
Y1 - 2018/12/7
N2 - Fast charging in transportation application requires high-power (>50 kW) operation. The overall size of wireless charging systems (WCS) must increase to meet the high-power requirement. As a result, high power systems produce more electromagnetic field (EMF) emissions. Although higher operating frequencies (85 kHz) reduce the size of inductors and capacitors, system losses tend to increase. High-power systems are traditionally investigated for 10 kHz to 22 kHz operation to reduce the switching loss in the converter, and conductive and magnetic losses in the power pad. The use of SiC MOSFETs reduces conduction and switching losses in the converter even at higher frequencies. In this paper, a comprehensive loss comparison of 50 kW wireless charging system is conducted for 85 kHz and 22 kHz operation of Si MOSFET and SiC MOSFET converters. Detailed performance indexes are compared analytically as a function of frequency and verified using FEA and PLECS. This comprehensive system level study shows that magnetic losses can be reduced significantly, and that EMF emission can be reduced by 50% by moving from 22 kHz to 85 kHz. Moreover, the system requires 50% less copper and allows a significant reduction in the size of the primary and secondary filter capacitor at 85 kHz. The results show that the system efficiency at 85 kHz can be increased by 21% compared to 22 kHz operation by using a SiC MOSFET converter.
AB - Fast charging in transportation application requires high-power (>50 kW) operation. The overall size of wireless charging systems (WCS) must increase to meet the high-power requirement. As a result, high power systems produce more electromagnetic field (EMF) emissions. Although higher operating frequencies (85 kHz) reduce the size of inductors and capacitors, system losses tend to increase. High-power systems are traditionally investigated for 10 kHz to 22 kHz operation to reduce the switching loss in the converter, and conductive and magnetic losses in the power pad. The use of SiC MOSFETs reduces conduction and switching losses in the converter even at higher frequencies. In this paper, a comprehensive loss comparison of 50 kW wireless charging system is conducted for 85 kHz and 22 kHz operation of Si MOSFET and SiC MOSFET converters. Detailed performance indexes are compared analytically as a function of frequency and verified using FEA and PLECS. This comprehensive system level study shows that magnetic losses can be reduced significantly, and that EMF emission can be reduced by 50% by moving from 22 kHz to 85 kHz. Moreover, the system requires 50% less copper and allows a significant reduction in the size of the primary and secondary filter capacitor at 85 kHz. The results show that the system efficiency at 85 kHz can be increased by 21% compared to 22 kHz operation by using a SiC MOSFET converter.
KW - Core loss
KW - EMF suppression
KW - Inductive charging
KW - Litz-wire
KW - Shield loss
UR - http://www.scopus.com/inward/record.url?scp=85060233854&partnerID=8YFLogxK
U2 - 10.1109/WiPDA.2018.8569097
DO - 10.1109/WiPDA.2018.8569097
M3 - Conference contribution
AN - SCOPUS:85060233854
T3 - 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018
SP - 192
EP - 198
BT - 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018
Y2 - 31 October 2018 through 2 November 2018
ER -
