Comparing crystallography and ferroelectric properties of a -axis oriented Bi3.25La0.75Ti3O12 versus non-c-axis oriented SrBi2Ta2O9 thin films on Si100)

D. Hesse; H. N. Lee; N. D. Zakharov

doi:10.1080/00150190390211242

Comparing crystallography and ferroelectric properties of a -axis oriented Bi_3.25La_0.75Ti₃O₁₂ versus non-c-axis oriented SrBi₂Ta₂O₉ thin films on Si100)

D. Hesse
, H. N. Lee
, N. D. Zakharov

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Growth, structure and properties of a -axis oriented ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 thin films on SrRuO 3 -electroded, buffered Si(100) substrates are compared with those of (116)-oriented ferroelectric SrBi 2 Ta 2 O 9 thin films on the same substrate. It is shown how the ferroelectric properties of (116)-oriented SrBi 2 Ta 2 O 9 films suffer from certain inherent crystallographic properties of the films, whereas a -axis oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films are free from such shortcomings. In result, the latter have a very large remanent polarization in amount of 32 μ C/cm 2 - a new record for bismuth-layered perovskite thin films on substrates - pointing to the superiority of a -axis oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films with respect to memory applications.

Original language	English
Pages (from-to)	287-301
Number of pages	15
Journal	Ferroelectrics
Volume	288
DOIs	https://doi.org/10.1080/00150190390211242
State	Published - Jun 1 2003
Externally published	Yes

Keywords

Bismuth-layered perovskites
Epitaxy
Ferroelectricity
Thin films

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10.1080/00150190390211242

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title = "Comparing crystallography and ferroelectric properties of a -axis oriented Bi3.25La0.75Ti3O12 versus non-c-axis oriented SrBi2Ta2O9 thin films on Si100)",

abstract = "Growth, structure and properties of a -axis oriented ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 thin films on SrRuO 3 -electroded, buffered Si(100) substrates are compared with those of (116)-oriented ferroelectric SrBi 2 Ta 2 O 9 thin films on the same substrate. It is shown how the ferroelectric properties of (116)-oriented SrBi 2 Ta 2 O 9 films suffer from certain inherent crystallographic properties of the films, whereas a -axis oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films are free from such shortcomings. In result, the latter have a very large remanent polarization in amount of 32 μ C/cm 2 - a new record for bismuth-layered perovskite thin films on substrates - pointing to the superiority of a -axis oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films with respect to memory applications.",

keywords = "Bismuth-layered perovskites, Epitaxy, Ferroelectricity, Thin films",

author = "D. Hesse and Lee, \{H. N.\} and Zakharov, \{N. D.\}",

year = "2003",

month = jun,

day = "1",

doi = "10.1080/00150190390211242",

language = "English",

volume = "288",

pages = "287--301",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Group",

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TY - JOUR

T1 - Comparing crystallography and ferroelectric properties of a -axis oriented Bi3.25La0.75Ti3O12 versus non-c-axis oriented SrBi2Ta2O9 thin films on Si100)

AU - Hesse, D.

AU - Lee, H. N.

AU - Zakharov, N. D.

PY - 2003/6/1

Y1 - 2003/6/1

N2 - Growth, structure and properties of a -axis oriented ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 thin films on SrRuO 3 -electroded, buffered Si(100) substrates are compared with those of (116)-oriented ferroelectric SrBi 2 Ta 2 O 9 thin films on the same substrate. It is shown how the ferroelectric properties of (116)-oriented SrBi 2 Ta 2 O 9 films suffer from certain inherent crystallographic properties of the films, whereas a -axis oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films are free from such shortcomings. In result, the latter have a very large remanent polarization in amount of 32 μ C/cm 2 - a new record for bismuth-layered perovskite thin films on substrates - pointing to the superiority of a -axis oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films with respect to memory applications.

AB - Growth, structure and properties of a -axis oriented ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 thin films on SrRuO 3 -electroded, buffered Si(100) substrates are compared with those of (116)-oriented ferroelectric SrBi 2 Ta 2 O 9 thin films on the same substrate. It is shown how the ferroelectric properties of (116)-oriented SrBi 2 Ta 2 O 9 films suffer from certain inherent crystallographic properties of the films, whereas a -axis oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films are free from such shortcomings. In result, the latter have a very large remanent polarization in amount of 32 μ C/cm 2 - a new record for bismuth-layered perovskite thin films on substrates - pointing to the superiority of a -axis oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films with respect to memory applications.

KW - Bismuth-layered perovskites

KW - Epitaxy

KW - Ferroelectricity

KW - Thin films

UR - https://www.scopus.com/pages/publications/33746280542

U2 - 10.1080/00150190390211242

DO - 10.1080/00150190390211242

M3 - Article

AN - SCOPUS:33746280542

SN - 0015-0193

VL - 288

SP - 287

EP - 301

JO - Ferroelectrics

JF - Ferroelectrics

ER -

Comparing crystallography and ferroelectric properties of a -axis oriented Bi_3.25La_0.75Ti₃O₁₂ versus non-c-axis oriented SrBi₂Ta₂O₉ thin films on Si100)

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Keywords

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