Abstract
Growth, structure and properties of a -axis oriented ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 thin films on SrRuO 3 -electroded, buffered Si(100) substrates are compared with those of (116)-oriented ferroelectric SrBi 2 Ta 2 O 9 thin films on the same substrate. It is shown how the ferroelectric properties of (116)-oriented SrBi 2 Ta 2 O 9 films suffer from certain inherent crystallographic properties of the films, whereas a -axis oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films are free from such shortcomings. In result, the latter have a very large remanent polarization in amount of 32 μ C/cm 2 - a new record for bismuth-layered perovskite thin films on substrates - pointing to the superiority of a -axis oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films with respect to memory applications.
Original language | English |
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Pages (from-to) | 287-301 |
Number of pages | 15 |
Journal | Ferroelectrics |
Volume | 288 |
DOIs | |
State | Published - Jun 1 2003 |
Externally published | Yes |
Keywords
- Bismuth-layered perovskites
- Epitaxy
- Ferroelectricity
- Thin films