Comparing crystallography and ferroelectric properties of a -axis oriented Bi3.25La0.75Ti3O12 versus non-c-axis oriented SrBi2Ta2O9 thin films on Si100)

D. Hesse, H. N. Lee, N. D. Zakharov

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Growth, structure and properties of a -axis oriented ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 thin films on SrRuO 3 -electroded, buffered Si(100) substrates are compared with those of (116)-oriented ferroelectric SrBi 2 Ta 2 O 9 thin films on the same substrate. It is shown how the ferroelectric properties of (116)-oriented SrBi 2 Ta 2 O 9 films suffer from certain inherent crystallographic properties of the films, whereas a -axis oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films are free from such shortcomings. In result, the latter have a very large remanent polarization in amount of 32 μ C/cm 2 - a new record for bismuth-layered perovskite thin films on substrates - pointing to the superiority of a -axis oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films with respect to memory applications.

Original languageEnglish
Pages (from-to)287-301
Number of pages15
JournalFerroelectrics
Volume288
DOIs
StatePublished - Jun 1 2003
Externally publishedYes

Keywords

  • Bismuth-layered perovskites
  • Epitaxy
  • Ferroelectricity
  • Thin films

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