Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules

Feida Chen; Sangwhee Lee; Thomas M. Jahns; Bulent Sarlioglu

doi:10.1109/WiPDA56483.2022.9955264

Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules

Feida Chen, Sangwhee Lee, Thomas M. Jahns, Bulent Sarlioglu

Electric Drives Research

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The purpose of this paper is to investigate the impact of the SiC device packages on the commutation performance characteristics of current-source inverters (CSIs). The parasitic components in the CSI current commutation loop between the two-phase legs and output capacitors have a significant impact on the high-frequency performance of the SiC devices. To meet the elevated current requirements of high-power CSIs, it is often necessary to connect multiple discrete devices in parallel which increases the current commutation loop length. The selection of compact high-power SiC MOSFET and Schottky diode modules instead of discrete devices can be highly desirable to reduce the loop inductance and improve the system performance and power density. Two CSI benchtop prototype units, one with SiC discrete devices and the other with power modules, have been designed and tested, and the performances of the two CSIs are compared. The CSI with SiC power modules significantly reduces the inverter volume and lowers the parasitic inductance by 60% and the voltage ripple amplitude by 20% compared to the CSI unit with discrete devices.

Original language	English
Title of host publication	2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	215-220
Number of pages	6
ISBN (Electronic)	9781665489003
DOIs	https://doi.org/10.1109/WiPDA56483.2022.9955264
State	Published - 2022
Event	9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022 - Redondo Beach, United States Duration: Nov 7 2022 → Nov 9 2022

Publication series

Name	2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022

Conference

Conference	9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022
Country/Territory	United States
City	Redondo Beach
Period	11/7/22 → 11/9/22

Funding

Financial support for this work is provided by the U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy (EERE) under the Vehicle Technologies Office (VTO), Award Number DE-EE0008704. ACKNOWLEDGMENT This material is based on work supported by the U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy (EERE) under the Vehicle Technologies Office (VTO), Award Number DE-EE0008704. The authors also gratefully acknowledge the support of the Wisconsin Electric Machines and Power Electronics Consortium (WEMPEC).

Keywords

SiC discrete devices
SiC power modules
current commutation
current source inverter
parasitic inductance
wide bandgap

Access to Document

10.1109/WiPDA56483.2022.9955264

Cite this

Chen, F., Lee, S., Jahns, T. M., & Sarlioglu, B. (2022). Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules. In 2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022 (pp. 215-220). (2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA56483.2022.9955264

Chen, Feida ; Lee, Sangwhee ; Jahns, Thomas M. et al. / Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules. 2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 215-220 (2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022).

@inproceedings{47cbcbc1ff3942dc9af7248e8491cf43,

title = "Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules",

abstract = "The purpose of this paper is to investigate the impact of the SiC device packages on the commutation performance characteristics of current-source inverters (CSIs). The parasitic components in the CSI current commutation loop between the two-phase legs and output capacitors have a significant impact on the high-frequency performance of the SiC devices. To meet the elevated current requirements of high-power CSIs, it is often necessary to connect multiple discrete devices in parallel which increases the current commutation loop length. The selection of compact high-power SiC MOSFET and Schottky diode modules instead of discrete devices can be highly desirable to reduce the loop inductance and improve the system performance and power density. Two CSI benchtop prototype units, one with SiC discrete devices and the other with power modules, have been designed and tested, and the performances of the two CSIs are compared. The CSI with SiC power modules significantly reduces the inverter volume and lowers the parasitic inductance by 60% and the voltage ripple amplitude by 20% compared to the CSI unit with discrete devices.",

keywords = "SiC discrete devices, SiC power modules, current commutation, current source inverter, parasitic inductance, wide bandgap",

author = "Feida Chen and Sangwhee Lee and Jahns, {Thomas M.} and Bulent Sarlioglu",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022 ; Conference date: 07-11-2022 Through 09-11-2022",

year = "2022",

doi = "10.1109/WiPDA56483.2022.9955264",

language = "English",

series = "2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "215--220",

booktitle = "2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022",

}

Chen, F, Lee, S, Jahns, TM & Sarlioglu, B 2022, Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules. in 2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022. 2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022, Institute of Electrical and Electronics Engineers Inc., pp. 215-220, 9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022, Redondo Beach, United States, 11/7/22. https://doi.org/10.1109/WiPDA56483.2022.9955264

Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules. / Chen, Feida; Lee, Sangwhee; Jahns, Thomas M. et al.
2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 215-220 (2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules

AU - Chen, Feida

AU - Lee, Sangwhee

AU - Jahns, Thomas M.

AU - Sarlioglu, Bulent

PY - 2022

Y1 - 2022

N2 - The purpose of this paper is to investigate the impact of the SiC device packages on the commutation performance characteristics of current-source inverters (CSIs). The parasitic components in the CSI current commutation loop between the two-phase legs and output capacitors have a significant impact on the high-frequency performance of the SiC devices. To meet the elevated current requirements of high-power CSIs, it is often necessary to connect multiple discrete devices in parallel which increases the current commutation loop length. The selection of compact high-power SiC MOSFET and Schottky diode modules instead of discrete devices can be highly desirable to reduce the loop inductance and improve the system performance and power density. Two CSI benchtop prototype units, one with SiC discrete devices and the other with power modules, have been designed and tested, and the performances of the two CSIs are compared. The CSI with SiC power modules significantly reduces the inverter volume and lowers the parasitic inductance by 60% and the voltage ripple amplitude by 20% compared to the CSI unit with discrete devices.

AB - The purpose of this paper is to investigate the impact of the SiC device packages on the commutation performance characteristics of current-source inverters (CSIs). The parasitic components in the CSI current commutation loop between the two-phase legs and output capacitors have a significant impact on the high-frequency performance of the SiC devices. To meet the elevated current requirements of high-power CSIs, it is often necessary to connect multiple discrete devices in parallel which increases the current commutation loop length. The selection of compact high-power SiC MOSFET and Schottky diode modules instead of discrete devices can be highly desirable to reduce the loop inductance and improve the system performance and power density. Two CSI benchtop prototype units, one with SiC discrete devices and the other with power modules, have been designed and tested, and the performances of the two CSIs are compared. The CSI with SiC power modules significantly reduces the inverter volume and lowers the parasitic inductance by 60% and the voltage ripple amplitude by 20% compared to the CSI unit with discrete devices.

KW - SiC discrete devices

KW - SiC power modules

KW - current commutation

KW - current source inverter

KW - parasitic inductance

KW - wide bandgap

UR - http://www.scopus.com/inward/record.url?scp=85143777405&partnerID=8YFLogxK

U2 - 10.1109/WiPDA56483.2022.9955264

DO - 10.1109/WiPDA56483.2022.9955264

M3 - Conference contribution

AN - SCOPUS:85143777405

T3 - 2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022

SP - 215

EP - 220

BT - 2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022

Y2 - 7 November 2022 through 9 November 2022

ER -

Chen F, Lee S, Jahns TM, Sarlioglu B. Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules. In 2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 215-220. (2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022). doi: 10.1109/WiPDA56483.2022.9955264

Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules

Abstract

Publication series

Conference

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this