Abstract
Static magnetic fields have been widely used to control the heat and mass transfer during crystal growth, whereas rotating magnetic fields are attracting a growing attention for crystal-growth technologies from the melt. A combination of static and rotating magnetic fields can be used to control the transport phenomena during semiconductor crystal growth. This paper treats the flow of molten gallium-antimonide and the dopant transport during the vertical Bridgman process using submerged heater growth in this combination of externally applied fields. This paper investigates the effects of these fields on the transport in the melt and on the dopant distributions in the crystal.
| Original language | English |
|---|---|
| Pages (from-to) | 736-743 |
| Number of pages | 8 |
| Journal | Journal of Thermophysics and Heat Transfer |
| Volume | 21 |
| Issue number | 4 |
| DOIs | |
| State | Published - 2007 |
| Externally published | Yes |
Funding
This research was supported by the U.S. Air Force Office of Scientific Research under grant FA9550-04-1-0249. The calculations were performed on the Cray X1 provided by the Department of Defense High Performance Computing Modernization Program under grant AFSNH2487 and on the IBM pSeries 690 provided by the National Computational Science Alliance under grant DMR030015.