Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals

A. Debelle; M. Backman; L. Thomé; W. J. Weber; M. Toulemonde; S. Mylonas; A. Boulle; O. H. Pakarinen; N. Juslin; F. Djurabekova; K. Nordlund; F. Garrido; D. Chaussende

doi:10.1103/PhysRevB.86.100102

Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals

A. Debelle, M. Backman, L. Thomé, W. J. Weber, M. Toulemonde, S. Mylonas, A. Boulle, O. H. Pakarinen, N. Juslin, F. Djurabekova, K. Nordlund, F. Garrido, D. Chaussende

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Abstract

The healing effect of intense electronic energy deposition arising during swift heavy ion (SHI) irradiation is demonstrated in the case of 3C-SiC damaged by nuclear energy deposition. Experimental (ion channeling experiments) and computational (molecular dynamics simulations) studies provide consistent indications of disorder decrease after SHI irradiation. Furthermore, both methods establish that SHI-induced recrystallization takes place at amorphous-crystalline interfaces. The recovery process is unambiguously accounted for by the thermal spike phenomenon.

Original language	English
Article number	100102
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.86.100102
State	Published - Sep 6 2012
Externally published	Yes

Access to Document

10.1103/PhysRevB.86.100102

Cite this

Debelle, A., Backman, M., Thomé, L., Weber, W. J., Toulemonde, M., Mylonas, S., Boulle, A., Pakarinen, O. H., Juslin, N., Djurabekova, F., Nordlund, K., Garrido, F., & Chaussende, D. (2012). Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals. Physical Review B - Condensed Matter and Materials Physics, 86(10), Article 100102. https://doi.org/10.1103/PhysRevB.86.100102

@article{2fce0e999ffe43bb855f68e71b9f11f8,

title = "Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals",

abstract = "The healing effect of intense electronic energy deposition arising during swift heavy ion (SHI) irradiation is demonstrated in the case of 3C-SiC damaged by nuclear energy deposition. Experimental (ion channeling experiments) and computational (molecular dynamics simulations) studies provide consistent indications of disorder decrease after SHI irradiation. Furthermore, both methods establish that SHI-induced recrystallization takes place at amorphous-crystalline interfaces. The recovery process is unambiguously accounted for by the thermal spike phenomenon.",

author = "A. Debelle and M. Backman and L. Thom{\'e} and Weber, {W. J.} and M. Toulemonde and S. Mylonas and A. Boulle and Pakarinen, {O. H.} and N. Juslin and F. Djurabekova and K. Nordlund and F. Garrido and D. Chaussende",

year = "2012",

month = sep,

day = "6",

doi = "10.1103/PhysRevB.86.100102",

language = "English",

volume = "86",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "10",

}

Debelle, A, Backman, M, Thomé, L, Weber, WJ, Toulemonde, M, Mylonas, S, Boulle, A, Pakarinen, OH, Juslin, N, Djurabekova, F, Nordlund, K, Garrido, F & Chaussende, D 2012, 'Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals', Physical Review B - Condensed Matter and Materials Physics, vol. 86, no. 10, 100102. https://doi.org/10.1103/PhysRevB.86.100102

Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals. / Debelle, A.; Backman, M.; Thomé, L. et al.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 86, No. 10, 100102, 06.09.2012.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals

AU - Debelle, A.

AU - Backman, M.

AU - Thomé, L.

AU - Weber, W. J.

AU - Toulemonde, M.

AU - Mylonas, S.

AU - Boulle, A.

AU - Pakarinen, O. H.

AU - Juslin, N.

AU - Djurabekova, F.

AU - Nordlund, K.

AU - Garrido, F.

AU - Chaussende, D.

PY - 2012/9/6

Y1 - 2012/9/6

N2 - The healing effect of intense electronic energy deposition arising during swift heavy ion (SHI) irradiation is demonstrated in the case of 3C-SiC damaged by nuclear energy deposition. Experimental (ion channeling experiments) and computational (molecular dynamics simulations) studies provide consistent indications of disorder decrease after SHI irradiation. Furthermore, both methods establish that SHI-induced recrystallization takes place at amorphous-crystalline interfaces. The recovery process is unambiguously accounted for by the thermal spike phenomenon.

AB - The healing effect of intense electronic energy deposition arising during swift heavy ion (SHI) irradiation is demonstrated in the case of 3C-SiC damaged by nuclear energy deposition. Experimental (ion channeling experiments) and computational (molecular dynamics simulations) studies provide consistent indications of disorder decrease after SHI irradiation. Furthermore, both methods establish that SHI-induced recrystallization takes place at amorphous-crystalline interfaces. The recovery process is unambiguously accounted for by the thermal spike phenomenon.

UR - http://www.scopus.com/inward/record.url?scp=84866391533&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.86.100102

DO - 10.1103/PhysRevB.86.100102

M3 - Article

AN - SCOPUS:84866391533

SN - 1098-0121

VL - 86

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 10

M1 - 100102

ER -

Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals

Abstract

Access to Document

Other files and links

Fingerprint

Cite this