COLUMN IIIA METAL FILM DEPOSITION BY LASER PHOTOIONIZATION OF METAL-HALIDE MOLECULES IN THE VAPOR PHASE.

D. B. Geohegan, A. W. McCown, J. G. Eden

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Virtually all of the techniques that are currently used to grow semiconductor or metal films from the vapor phase deal with chemical reactants and products that are electrically neutral. The thin film deposition technique described here exploits the large photoionization cross-sections of several metal-halide molecules in the ultraviolet to produce large and easily controlled densities of positive metal ions. Such an approach offers several advantages over current techniques.

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsA.Wayne Johnson, Daniel J. Ehrlich, Howard R. Schlossberg
PublisherNorth-Holland
Pages93-100
Number of pages8
ISBN (Print)0444008942
StatePublished - 1984
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume29
ISSN (Print)0272-9172

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