Column IIIA metal film deposition by dissociative photoionization of metal halide vapors

D. B. Geohegan; J. G. Eden

doi:10.1063/1.95017

Column IIIA metal film deposition by dissociative photoionization of metal halide vapors

D. B. Geohegan
, J. G. Eden

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Films of column IIIA metals (In, Al, and Tl) have been deposited on several different substrates (stainless steel, nickel, copper, and silver) by dissociatively photoionizing the corresponding metal iodide in a uniform electric field. Thin (≲0.2 μm) indium films have been grown on nickel by photoionizing indium monoiodide (InI) vapor with an argon fluoride (ArF) excimer laser at 193 nm. A similar process has resulted in thallium films produced from thallium iodide (TlI) vapor with a high pressure xenon lamp.

Original language	English
Pages (from-to)	1146-1148
Number of pages	3
Journal	Applied Physics Letters
Volume	45
Issue number	10
DOIs	https://doi.org/10.1063/1.95017
State	Published - 1984
Externally published	Yes

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title = "Column IIIA metal film deposition by dissociative photoionization of metal halide vapors",

abstract = "Films of column IIIA metals (In, Al, and Tl) have been deposited on several different substrates (stainless steel, nickel, copper, and silver) by dissociatively photoionizing the corresponding metal iodide in a uniform electric field. Thin (≲0.2 μm) indium films have been grown on nickel by photoionizing indium monoiodide (InI) vapor with an argon fluoride (ArF) excimer laser at 193 nm. A similar process has resulted in thallium films produced from thallium iodide (TlI) vapor with a high pressure xenon lamp.",

author = "Geohegan, \{D. B.\} and Eden, \{J. G.\}",

year = "1984",

doi = "10.1063/1.95017",

language = "English",

volume = "45",

pages = "1146--1148",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

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T1 - Column IIIA metal film deposition by dissociative photoionization of metal halide vapors

AU - Geohegan, D. B.

AU - Eden, J. G.

PY - 1984

Y1 - 1984

N2 - Films of column IIIA metals (In, Al, and Tl) have been deposited on several different substrates (stainless steel, nickel, copper, and silver) by dissociatively photoionizing the corresponding metal iodide in a uniform electric field. Thin (≲0.2 μm) indium films have been grown on nickel by photoionizing indium monoiodide (InI) vapor with an argon fluoride (ArF) excimer laser at 193 nm. A similar process has resulted in thallium films produced from thallium iodide (TlI) vapor with a high pressure xenon lamp.

AB - Films of column IIIA metals (In, Al, and Tl) have been deposited on several different substrates (stainless steel, nickel, copper, and silver) by dissociatively photoionizing the corresponding metal iodide in a uniform electric field. Thin (≲0.2 μm) indium films have been grown on nickel by photoionizing indium monoiodide (InI) vapor with an argon fluoride (ArF) excimer laser at 193 nm. A similar process has resulted in thallium films produced from thallium iodide (TlI) vapor with a high pressure xenon lamp.

UR - https://www.scopus.com/pages/publications/26444592941

U2 - 10.1063/1.95017

DO - 10.1063/1.95017

M3 - Article

AN - SCOPUS:26444592941

SN - 0003-6951

VL - 45

SP - 1146

EP - 1148

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Column IIIA metal film deposition by dissociative photoionization of metal halide vapors

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