Column IIIA metal film deposition by dissociative photoionization of metal halide vapors

D. B. Geohegan; J. G. Eden

doi:10.1063/1.95017

Column IIIA metal film deposition by dissociative photoionization of metal halide vapors

D. B. Geohegan, J. G. Eden

University of Illinois at Urbana-Champaign

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Films of column IIIA metals (In, Al, and Tl) have been deposited on several different substrates (stainless steel, nickel, copper, and silver) by dissociatively photoionizing the corresponding metal iodide in a uniform electric field. Thin (≲0.2 μm) indium films have been grown on nickel by photoionizing indium monoiodide (InI) vapor with an argon fluoride (ArF) excimer laser at 193 nm. A similar process has resulted in thallium films produced from thallium iodide (TlI) vapor with a high pressure xenon lamp.

Original language	English
Pages (from-to)	1146-1148
Number of pages	3
Journal	Applied Physics Letters
Volume	45
Issue number	10
DOIs	https://doi.org/10.1063/1.95017
State	Published - 1984
Externally published	Yes

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title = "Column IIIA metal film deposition by dissociative photoionization of metal halide vapors",

abstract = "Films of column IIIA metals (In, Al, and Tl) have been deposited on several different substrates (stainless steel, nickel, copper, and silver) by dissociatively photoionizing the corresponding metal iodide in a uniform electric field. Thin (≲0.2 μm) indium films have been grown on nickel by photoionizing indium monoiodide (InI) vapor with an argon fluoride (ArF) excimer laser at 193 nm. A similar process has resulted in thallium films produced from thallium iodide (TlI) vapor with a high pressure xenon lamp.",

author = "Geohegan, {D. B.} and Eden, {J. G.}",

year = "1984",

doi = "10.1063/1.95017",

language = "English",

volume = "45",

pages = "1146--1148",

journal = "Applied Physics Letters",

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T1 - Column IIIA metal film deposition by dissociative photoionization of metal halide vapors

AU - Geohegan, D. B.

AU - Eden, J. G.

PY - 1984

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N2 - Films of column IIIA metals (In, Al, and Tl) have been deposited on several different substrates (stainless steel, nickel, copper, and silver) by dissociatively photoionizing the corresponding metal iodide in a uniform electric field. Thin (≲0.2 μm) indium films have been grown on nickel by photoionizing indium monoiodide (InI) vapor with an argon fluoride (ArF) excimer laser at 193 nm. A similar process has resulted in thallium films produced from thallium iodide (TlI) vapor with a high pressure xenon lamp.

AB - Films of column IIIA metals (In, Al, and Tl) have been deposited on several different substrates (stainless steel, nickel, copper, and silver) by dissociatively photoionizing the corresponding metal iodide in a uniform electric field. Thin (≲0.2 μm) indium films have been grown on nickel by photoionizing indium monoiodide (InI) vapor with an argon fluoride (ArF) excimer laser at 193 nm. A similar process has resulted in thallium films produced from thallium iodide (TlI) vapor with a high pressure xenon lamp.

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VL - 45

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Column IIIA metal film deposition by dissociative photoionization of metal halide vapors

Abstract

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