Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

Rongwei Hu; K. J. Thomas; Y. Lee; T. Vogt; E. S. Choi; V. F. Mitrović; R. P. Hermann; F. Grandjean; P. C. Canfield; J. W. Kim; A. I. Goldman; C. Petrovic

doi:10.1103/PhysRevB.77.085212

Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

Rongwei Hu
, K. J. Thomas
, Y. Lee
, T. Vogt
, E. S. Choi
, V. F. Mitrović
, R. P. Hermann
, F. Grandjean
, P. C. Canfield
, J. W. Kim
, A. I. Goldman
, C. Petrovic

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

Original language	English
Article number	085212
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	77
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.77.085212
State	Published - Feb 27 2008
Externally published	Yes

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Hu, R., Thomas, K. J., Lee, Y., Vogt, T., Choi, E. S., Mitrović, V. F., Hermann, R. P., Grandjean, F., Canfield, P. C., Kim, J. W., Goldman, A. I., & Petrovic, C. (2008). Colossal positive magnetoresistance in a doped nearly magnetic semiconductor. Physical Review B - Condensed Matter and Materials Physics, 77(8), Article 085212. https://doi.org/10.1103/PhysRevB.77.085212

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abstract = "We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or {"}Kondo{"} semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.",

author = "Rongwei Hu and Thomas, \{K. J.\} and Y. Lee and T. Vogt and Choi, \{E. S.\} and Mitrovi{\'c}, \{V. F.\} and Hermann, \{R. P.\} and F. Grandjean and Canfield, \{P. C.\} and Kim, \{J. W.\} and Goldman, \{A. I.\} and C. Petrovic",

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doi = "10.1103/PhysRevB.77.085212",

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AU - Hu, Rongwei

AU - Thomas, K. J.

AU - Lee, Y.

AU - Vogt, T.

AU - Choi, E. S.

AU - Mitrović, V. F.

AU - Hermann, R. P.

AU - Grandjean, F.

AU - Canfield, P. C.

AU - Kim, J. W.

AU - Goldman, A. I.

AU - Petrovic, C.

PY - 2008/2/27

Y1 - 2008/2/27

N2 - We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

AB - We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

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DO - 10.1103/PhysRevB.77.085212

M3 - Article

AN - SCOPUS:40949142227

SN - 1098-0121

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 8

M1 - 085212

ER -

Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

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