Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

Rongwei Hu; K. J. Thomas; Y. Lee; T. Vogt; E. S. Choi; V. F. Mitrović; R. P. Hermann; F. Grandjean; P. C. Canfield; J. W. Kim; A. I. Goldman; C. Petrovic

doi:10.1103/PhysRevB.77.085212

Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

Rongwei Hu, K. J. Thomas, Y. Lee, T. Vogt, E. S. Choi, V. F. Mitrović, R. P. Hermann, F. Grandjean, P. C. Canfield, J. W. Kim, A. I. Goldman, C. Petrovic

Neutron & X-Ray Scattering, & Thermophys

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

Original language	English
Article number	085212
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	77
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.77.085212
State	Published - Feb 27 2008

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Hu, R., Thomas, K. J., Lee, Y., Vogt, T., Choi, E. S., Mitrović, V. F., Hermann, R. P., Grandjean, F., Canfield, P. C., Kim, J. W., Goldman, A. I., & Petrovic, C. (2008). Colossal positive magnetoresistance in a doped nearly magnetic semiconductor. Physical Review B - Condensed Matter and Materials Physics, 77(8), Article 085212. https://doi.org/10.1103/PhysRevB.77.085212

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abstract = "We report on a positive colossal magnetoresistance (MR) induced by metallization of Fe Sb2, a nearly magnetic or {"}Kondo{"} semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.",

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AU - Mitrović, V. F.

AU - Hermann, R. P.

AU - Grandjean, F.

AU - Canfield, P. C.

AU - Kim, J. W.

AU - Goldman, A. I.

AU - Petrovic, C.

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Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

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