Coherently strained epitaxial Pb(Zr1-xTix)O 3 thin films

Raegan L. Johnson-Wilke; Daniel S. Tinberg; C. Yeager; Weiguo Qu; Dillon D. Fong; Timothy T. Fister; Stephen K. Streiffer; Yisong Han; Ian M. Reaney; Susan Trolier-Mckinstry

doi:10.1063/1.4825215

Coherently strained epitaxial Pb(Zr_1-xTi_x)O ₃ thin films

Raegan L. Johnson-Wilke, Daniel S. Tinberg, C. Yeager, Weiguo Qu, Dillon D. Fong, Timothy T. Fister, Stephen K. Streiffer, Yisong Han, Ian M. Reaney, Susan Trolier-Mckinstry

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Coherently strained Pb(Zr_1-xTi_x)O_3, 0.2 ≤ x ≤ 0.35, thin films were grown by pulsed laser deposition on (001) and (111) oriented SrTiO₃ substrates. A buffer layer of Pb(Zr _0.6Ti_0.4)O₃ was used to improve the lattice matching and induce compressive strain in Zr-rich compositions. The (001) _pc (pc = pseudocubic) films showed an increased ferroelectric transition temperature, T_C, compared to bulk ceramics, but the transition from an untilted to a tilted ferroelectric (T_Tilt) exhibited only a modest increase in temperature. This suggests that it may be possible to enlarge the untilted ferroelectric phase field by compressive strain. Consistent with previous work on relaxed PZT films, coherently strained PZT films do not exhibit an abrupt transition from an untilted to a tilted state; rather, a region of non-zero tilt exists above T_Tilt. (111)_pc films also showed an increased ferroelectric transition temperature with a weak strain dependence on T_Tilt. The compressive strain in (111)_pc films induced a preferred domain structure with only 180° domain walls, in contrast to bulk materials and relaxed films which are polydomain.

Original language	English
Article number	164104
Journal	Journal of Applied Physics
Volume	114
Issue number	16
DOIs	https://doi.org/10.1063/1.4825215
State	Published - Oct 28 2013
Externally published	Yes

Funding

R.L.J.-W., D.S.T., C.Y., and S.T.-M. were funded through Grants DMR-0602770 and DMR-0820404 from the National Science Foundation. D.D.F., T.T.F., and S.K.S. were supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering. The use of the Advanced Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. We would like to thank Dr. Jenia Karapetrova at Sector 33BM and Peter Baldo at Argonne National Laboratory for their assistance during the synchrotron diffraction experiments.

Funders	Funder number
National Science Foundation
U.S. Department of Energy
Office of Science	DE-AC02-06CH11357
Basic Energy Sciences
Division of Materials Sciences and Engineering
Engineering and Physical Sciences Research Council	EP/D067049/1

Access to Document

10.1063/1.4825215

Cite this

@article{fd563ea480554f5cbc0fc507a08f8829,

title = "Coherently strained epitaxial Pb(Zr1-xTix)O 3 thin films",

abstract = "Coherently strained Pb(Zr1-xTix)O3, 0.2 ≤ x ≤ 0.35, thin films were grown by pulsed laser deposition on (001) and (111) oriented SrTiO3 substrates. A buffer layer of Pb(Zr 0.6Ti0.4)O3 was used to improve the lattice matching and induce compressive strain in Zr-rich compositions. The (001) pc (pc = pseudocubic) films showed an increased ferroelectric transition temperature, TC, compared to bulk ceramics, but the transition from an untilted to a tilted ferroelectric (TTilt) exhibited only a modest increase in temperature. This suggests that it may be possible to enlarge the untilted ferroelectric phase field by compressive strain. Consistent with previous work on relaxed PZT films, coherently strained PZT films do not exhibit an abrupt transition from an untilted to a tilted state; rather, a region of non-zero tilt exists above TTilt. (111)pc films also showed an increased ferroelectric transition temperature with a weak strain dependence on TTilt. The compressive strain in (111)pc films induced a preferred domain structure with only 180° domain walls, in contrast to bulk materials and relaxed films which are polydomain.",

author = "Johnson-Wilke, {Raegan L.} and Tinberg, {Daniel S.} and C. Yeager and Weiguo Qu and Fong, {Dillon D.} and Fister, {Timothy T.} and Streiffer, {Stephen K.} and Yisong Han and Reaney, {Ian M.} and Susan Trolier-Mckinstry",

year = "2013",

month = oct,

day = "28",

doi = "10.1063/1.4825215",

language = "English",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Coherently strained epitaxial Pb(Zr1-xTix)O 3 thin films

AU - Johnson-Wilke, Raegan L.

AU - Tinberg, Daniel S.

AU - Yeager, C.

AU - Qu, Weiguo

AU - Fong, Dillon D.

AU - Fister, Timothy T.

AU - Streiffer, Stephen K.

AU - Han, Yisong

AU - Reaney, Ian M.

AU - Trolier-Mckinstry, Susan

PY - 2013/10/28

Y1 - 2013/10/28

N2 - Coherently strained Pb(Zr1-xTix)O3, 0.2 ≤ x ≤ 0.35, thin films were grown by pulsed laser deposition on (001) and (111) oriented SrTiO3 substrates. A buffer layer of Pb(Zr 0.6Ti0.4)O3 was used to improve the lattice matching and induce compressive strain in Zr-rich compositions. The (001) pc (pc = pseudocubic) films showed an increased ferroelectric transition temperature, TC, compared to bulk ceramics, but the transition from an untilted to a tilted ferroelectric (TTilt) exhibited only a modest increase in temperature. This suggests that it may be possible to enlarge the untilted ferroelectric phase field by compressive strain. Consistent with previous work on relaxed PZT films, coherently strained PZT films do not exhibit an abrupt transition from an untilted to a tilted state; rather, a region of non-zero tilt exists above TTilt. (111)pc films also showed an increased ferroelectric transition temperature with a weak strain dependence on TTilt. The compressive strain in (111)pc films induced a preferred domain structure with only 180° domain walls, in contrast to bulk materials and relaxed films which are polydomain.

AB - Coherently strained Pb(Zr1-xTix)O3, 0.2 ≤ x ≤ 0.35, thin films were grown by pulsed laser deposition on (001) and (111) oriented SrTiO3 substrates. A buffer layer of Pb(Zr 0.6Ti0.4)O3 was used to improve the lattice matching and induce compressive strain in Zr-rich compositions. The (001) pc (pc = pseudocubic) films showed an increased ferroelectric transition temperature, TC, compared to bulk ceramics, but the transition from an untilted to a tilted ferroelectric (TTilt) exhibited only a modest increase in temperature. This suggests that it may be possible to enlarge the untilted ferroelectric phase field by compressive strain. Consistent with previous work on relaxed PZT films, coherently strained PZT films do not exhibit an abrupt transition from an untilted to a tilted state; rather, a region of non-zero tilt exists above TTilt. (111)pc films also showed an increased ferroelectric transition temperature with a weak strain dependence on TTilt. The compressive strain in (111)pc films induced a preferred domain structure with only 180° domain walls, in contrast to bulk materials and relaxed films which are polydomain.

UR - http://www.scopus.com/inward/record.url?scp=84887305045&partnerID=8YFLogxK

U2 - 10.1063/1.4825215

DO - 10.1063/1.4825215

M3 - Article

AN - SCOPUS:84887305045

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 16

M1 - 164104

ER -

Coherently strained epitaxial Pb(Zr_1-xTi_x)O ₃ thin films

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this