Coherent x-ray diffraction imaging of silicon oxide growth

I. K. Robinson, J. L. Libbert, I. A. Vartanyants, J. A. Pitney, D. M. Smilgies, D. L. Abernathy, G. Grübel

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

We have measured the morphology of Si samples as a function of time in air after stripping of the native oxide. For this purpose we examined the reflectivity of a coherent beam of x rays, which produces a structured diffraction pattern. We have made further progress in the development of an inversion algorithm for conversion of these patterns into one-dimensional height images. Nanometer-sized features are found to grow and evolve in waves across the surface on the time scale of minutes to hours.

Original languageEnglish
Pages (from-to)9965-9972
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number14
DOIs
StatePublished - 1999
Externally publishedYes

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