Abstract
Single-crystal inorganic halide perovskites are attracting interest for quantum device applications. Here we present low-temperature quantum magnetotransport measurements on thin film devices of epitaxial single-crystal CsSnBr3, which exhibit two-dimensional Mott variable range hopping (VRH) and giant negative magnetoresistance. These findings are described by a model for quantum interference between different directed hopping paths, and we extract the temperature-dependent hopping length of charge carriers, their localization length, and a lower bound for their phase coherence length of ∼100 nm at low temperatures. These observations demonstrate that epitaxial halide perovskite devices are emerging as a material class for low-dimensional quantum coherent transport devices.
| Original language | English |
|---|---|
| Pages (from-to) | 2948-2952 |
| Number of pages | 5 |
| Journal | ACS Applied Electronic Materials |
| Volume | 3 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jul 27 2021 |
Funding
We thank J. I. A. Li, B. I. Shklovskii, and E. A. Henriksen for fruitful discussions. This work was supported by the National Science Foundation via Grant DMR-1807573. J.P. also acknowledges the valuable support of the Cowen Family Endowment at MSU. B.S. was partially supported by the Center for Emergent Materials, an NSF-funded MRSEC, under Grant DMR-2011876.
Keywords
- CsSnBr
- epitaxial halide perovskites
- giant negative magnetoresistance
- magnetotransport
- quantum devices