Coercive field and magnetization deficit in Ga1-xMnxAs epilayers

S. J. Potashnik; K. C. Ku; R. F. Wang; M. B. Stone; N. Samarth; P. Schiffer; S. H. Chun

doi:10.1063/1.1556109

Coercive field and magnetization deficit in Ga_1-xMn_xAs epilayers

S. J. Potashnik, K. C. Ku, R. F. Wang, M. B. Stone, N. Samarth, P. Schiffer, S. H. Chun

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34 Scopus citations

Abstract

The field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga_1-xMn_xAs for 0.0135<x<0.083 was discussed. It was suggested that the spin state of the nonferromagnetic Mn spins were energetically well separated from the ferromagnetism of the bulk of the spins. The analysis showed that H_c decreased with increasing Mn concentration as predicted theoretically.

Original language	English
Pages (from-to)	6784-6786
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	10 2
DOIs	https://doi.org/10.1063/1.1556109
State	Published - May 15 2003
Externally published	Yes

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title = "Coercive field and magnetization deficit in Ga1-xMnxAs epilayers",

abstract = "The field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga1-xMnxAs for 0.0135c decreased with increasing Mn concentration as predicted theoretically.",

author = "Potashnik, {S. J.} and Ku, {K. C.} and Wang, {R. F.} and Stone, {M. B.} and N. Samarth and P. Schiffer and Chun, {S. H.}",

year = "2003",

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T1 - Coercive field and magnetization deficit in Ga1-xMnxAs epilayers

AU - Potashnik, S. J.

AU - Ku, K. C.

AU - Wang, R. F.

AU - Stone, M. B.

AU - Samarth, N.

AU - Schiffer, P.

AU - Chun, S. H.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - The field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga1-xMnxAs for 0.0135c decreased with increasing Mn concentration as predicted theoretically.

AB - The field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga1-xMnxAs for 0.0135c decreased with increasing Mn concentration as predicted theoretically.

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U2 - 10.1063/1.1556109

DO - 10.1063/1.1556109

M3 - Article

AN - SCOPUS:0037977057

SN - 0021-8979

VL - 93

SP - 6784

EP - 6786

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10 2

ER -

Coercive field and magnetization deficit in Ga_1-xMn_xAs epilayers

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