CMOS readout system for a double-sided germanium strip detector

R. A. Kroeger; W. N. Johnson; J. D. Kurfess; W. G. Schwarz; M. E. Read; M. D. Allen; G. T. Alley; C. L. Britton; L. C. Clonts; M. N. Ericson; M. L. Simpson

CMOS readout system for a double-sided germanium strip detector

R. A. Kroeger, W. N. Johnson, J. D. Kurfess, W. G. Schwarz, M. E. Read, M. D. Allen, G. T. Alley, C. L. Britton, L. C. Clonts, M. N. Ericson, M. L. Simpson

Research output: Contribution to conference › Paper › peer-review

Abstract

A wide variety of applications require a hard X-ray or gamma ray detector which combine both good spatial resolution and energy resolution. Double-sided solid-state strip detectors provide this capability. We report on the development of CMOS electronics designed for photon detection with strip detectors. These electronics include a low noise preamplifier, semi-gaussian shaping amplifier, discriminator, and peak detection circuitry. All circuits are designed to operate at low power. Circuits have been duplicated in both NMOS and PMOS to provide both polarities of signals. We have constructed an 8×8 channel system to test these prototype chips. Power consumption for the preamplifier through peak-detector circuit is 4 mW/channel. The test system has a conversion gain of approximately 35 mV/fC, system noise (equivalent noise charge) of ENC<220 e rms (0 pF), and a dynamic range of >100:1 in both NMOS and PMOS circuits.

Original language	English
Pages	691-693
Number of pages	3
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 IEEE Nuclear Science Symposium - Albuquerque, NM, USA Duration: Nov 9 1997 → Nov 15 1997

Conference

Conference	Proceedings of the 1997 IEEE Nuclear Science Symposium
City	Albuquerque, NM, USA
Period	11/9/97 → 11/15/97

Cite this

@conference{b0719801a77e4cb180c4409a72821f2a,

title = "CMOS readout system for a double-sided germanium strip detector",

abstract = "A wide variety of applications require a hard X-ray or gamma ray detector which combine both good spatial resolution and energy resolution. Double-sided solid-state strip detectors provide this capability. We report on the development of CMOS electronics designed for photon detection with strip detectors. These electronics include a low noise preamplifier, semi-gaussian shaping amplifier, discriminator, and peak detection circuitry. All circuits are designed to operate at low power. Circuits have been duplicated in both NMOS and PMOS to provide both polarities of signals. We have constructed an 8×8 channel system to test these prototype chips. Power consumption for the preamplifier through peak-detector circuit is 4 mW/channel. The test system has a conversion gain of approximately 35 mV/fC, system noise (equivalent noise charge) of ENC<220 e rms (0 pF), and a dynamic range of >100:1 in both NMOS and PMOS circuits.",

author = "Kroeger, {R. A.} and Johnson, {W. N.} and Kurfess, {J. D.} and Schwarz, {W. G.} and Read, {M. E.} and Allen, {M. D.} and Alley, {G. T.} and Britton, {C. L.} and Clonts, {L. C.} and Ericson, {M. N.} and Simpson, {M. L.}",

year = "1997",

language = "English",

pages = "691--693",

note = "Proceedings of the 1997 IEEE Nuclear Science Symposium ; Conference date: 09-11-1997 Through 15-11-1997",

}

TY - CONF

T1 - CMOS readout system for a double-sided germanium strip detector

AU - Kroeger, R. A.

AU - Johnson, W. N.

AU - Kurfess, J. D.

AU - Schwarz, W. G.

AU - Read, M. E.

AU - Allen, M. D.

AU - Alley, G. T.

AU - Britton, C. L.

AU - Clonts, L. C.

AU - Ericson, M. N.

AU - Simpson, M. L.

PY - 1997

Y1 - 1997

N2 - A wide variety of applications require a hard X-ray or gamma ray detector which combine both good spatial resolution and energy resolution. Double-sided solid-state strip detectors provide this capability. We report on the development of CMOS electronics designed for photon detection with strip detectors. These electronics include a low noise preamplifier, semi-gaussian shaping amplifier, discriminator, and peak detection circuitry. All circuits are designed to operate at low power. Circuits have been duplicated in both NMOS and PMOS to provide both polarities of signals. We have constructed an 8×8 channel system to test these prototype chips. Power consumption for the preamplifier through peak-detector circuit is 4 mW/channel. The test system has a conversion gain of approximately 35 mV/fC, system noise (equivalent noise charge) of ENC<220 e rms (0 pF), and a dynamic range of >100:1 in both NMOS and PMOS circuits.

AB - A wide variety of applications require a hard X-ray or gamma ray detector which combine both good spatial resolution and energy resolution. Double-sided solid-state strip detectors provide this capability. We report on the development of CMOS electronics designed for photon detection with strip detectors. These electronics include a low noise preamplifier, semi-gaussian shaping amplifier, discriminator, and peak detection circuitry. All circuits are designed to operate at low power. Circuits have been duplicated in both NMOS and PMOS to provide both polarities of signals. We have constructed an 8×8 channel system to test these prototype chips. Power consumption for the preamplifier through peak-detector circuit is 4 mW/channel. The test system has a conversion gain of approximately 35 mV/fC, system noise (equivalent noise charge) of ENC<220 e rms (0 pF), and a dynamic range of >100:1 in both NMOS and PMOS circuits.

UR - http://www.scopus.com/inward/record.url?scp=0031380185&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0031380185

SP - 691

EP - 693

T2 - Proceedings of the 1997 IEEE Nuclear Science Symposium

Y2 - 9 November 1997 through 15 November 1997

ER -

CMOS readout system for a double-sided germanium strip detector

Abstract

Conference

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