Abstract
Interference-enhanced, in situ Raman scattering has been used to study clusters and ultrathin films of Ge sputter-deposited on C films in ultrahigh vacuum. Measurements of the two polarization components of the Raman scattering are found to yield amorphous-like spectra that are modified by dangling bonds. Large concentrations of dangling bonds at cluster surfaces result in a reduction of the high-frequency optic phonon peak due to changes in the local dynamics. Chemisorption of H and O on these clusters and ultrathin films saturates these dangling bonds, removing the large size-dependent shift and reducing the relative intensity of low-frequency scattering. These effects are attributed to the rehybridization of the orbitals of back-bonded Ge cluster atoms.
| Original language | English |
|---|---|
| Pages (from-to) | 251-260 |
| Number of pages | 10 |
| Journal | Surface Science |
| Volume | 254 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - Aug 2 1991 |
| Externally published | Yes |
Funding
We wish to thank Dr. R.Q. Yu for useful discussions of UPS results and M. Mitch for experimental assistance.T his work was supported by NSF Grant DMR 8902391.