Chemisorption effects on the dynamics of Ge clusters and ultrathin films

J. Fortner; J. S. Lannin

doi:10.1016/0039-6028(91)90657-E

Chemisorption effects on the dynamics of Ge clusters and ultrathin films

J. Fortner, J. S. Lannin

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Interference-enhanced, in situ Raman scattering has been used to study clusters and ultrathin films of Ge sputter-deposited on C films in ultrahigh vacuum. Measurements of the two polarization components of the Raman scattering are found to yield amorphous-like spectra that are modified by dangling bonds. Large concentrations of dangling bonds at cluster surfaces result in a reduction of the high-frequency optic phonon peak due to changes in the local dynamics. Chemisorption of H and O on these clusters and ultrathin films saturates these dangling bonds, removing the large size-dependent shift and reducing the relative intensity of low-frequency scattering. These effects are attributed to the rehybridization of the orbitals of back-bonded Ge cluster atoms.

Original language	English
Pages (from-to)	251-260
Number of pages	10
Journal	Surface Science
Volume	254
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(91)90657-E
State	Published - Aug 2 1991
Externally published	Yes

Funding

We wish to thank Dr. R.Q. Yu for useful discussions of UPS results and M. Mitch for experimental assistance.T his work was supported by NSF Grant DMR 8902391.

Funders	Funder number
National Science Foundation	DMR 8902391

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abstract = "Interference-enhanced, in situ Raman scattering has been used to study clusters and ultrathin films of Ge sputter-deposited on C films in ultrahigh vacuum. Measurements of the two polarization components of the Raman scattering are found to yield amorphous-like spectra that are modified by dangling bonds. Large concentrations of dangling bonds at cluster surfaces result in a reduction of the high-frequency optic phonon peak due to changes in the local dynamics. Chemisorption of H and O on these clusters and ultrathin films saturates these dangling bonds, removing the large size-dependent shift and reducing the relative intensity of low-frequency scattering. These effects are attributed to the rehybridization of the orbitals of back-bonded Ge cluster atoms.",

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AB - Interference-enhanced, in situ Raman scattering has been used to study clusters and ultrathin films of Ge sputter-deposited on C films in ultrahigh vacuum. Measurements of the two polarization components of the Raman scattering are found to yield amorphous-like spectra that are modified by dangling bonds. Large concentrations of dangling bonds at cluster surfaces result in a reduction of the high-frequency optic phonon peak due to changes in the local dynamics. Chemisorption of H and O on these clusters and ultrathin films saturates these dangling bonds, removing the large size-dependent shift and reducing the relative intensity of low-frequency scattering. These effects are attributed to the rehybridization of the orbitals of back-bonded Ge cluster atoms.

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Chemisorption effects on the dynamics of Ge clusters and ultrathin films

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