Chemical vapor deposition of graphene on large-domain ultra-flat copper

Shonali Dhingra; Jen Feng Hsu; Ivan Vlassiouk; Brian D'Urso

doi:10.1016/j.carbon.2013.12.014

Chemical vapor deposition of graphene on large-domain ultra-flat copper

Shonali Dhingra, Jen Feng Hsu, Ivan Vlassiouk, Brian D'Urso

Functional Hybrid Nanomaterials

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51 Scopus citations

Abstract

Copper foil is the most commonly used substrate for chemical vapor deposition (CVD) growth of graphene, despite the impact of its surface roughness and polycrystalline structure on the resulting graphene. Here we present a method of preparing thick, ultra-flat copper substrates for growing graphene by CVD. We demonstrate the growth of graphene on these substrates using the common Atmospheric Pressure CVD (APCVD) and Low Pressure CVD (LPCVD) methods. We show that compared to copper foil, graphene grown on these thick ultra-flat copper substrates by APCVD results in 50 times smoother graphene on copper. Furthermore, the thick copper substrates have at least 5 times larger copper domains, compared to conventionally prepared copper foil. The evolution of the surface roughness in each growth method is also presented.

Original language	English
Pages (from-to)	188-193
Number of pages	6
Journal	Carbon
Volume	69
DOIs	https://doi.org/10.1016/j.carbon.2013.12.014
State	Published - Apr 2014

Funding

We thank W. J. Choyke and his students, D. Yates and N. Grama, for helping us with the roughness measurements on the interferometer. This research was supported by a DARPA Young Faculty Award.

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abstract = "Copper foil is the most commonly used substrate for chemical vapor deposition (CVD) growth of graphene, despite the impact of its surface roughness and polycrystalline structure on the resulting graphene. Here we present a method of preparing thick, ultra-flat copper substrates for growing graphene by CVD. We demonstrate the growth of graphene on these substrates using the common Atmospheric Pressure CVD (APCVD) and Low Pressure CVD (LPCVD) methods. We show that compared to copper foil, graphene grown on these thick ultra-flat copper substrates by APCVD results in 50 times smoother graphene on copper. Furthermore, the thick copper substrates have at least 5 times larger copper domains, compared to conventionally prepared copper foil. The evolution of the surface roughness in each growth method is also presented.",

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AB - Copper foil is the most commonly used substrate for chemical vapor deposition (CVD) growth of graphene, despite the impact of its surface roughness and polycrystalline structure on the resulting graphene. Here we present a method of preparing thick, ultra-flat copper substrates for growing graphene by CVD. We demonstrate the growth of graphene on these substrates using the common Atmospheric Pressure CVD (APCVD) and Low Pressure CVD (LPCVD) methods. We show that compared to copper foil, graphene grown on these thick ultra-flat copper substrates by APCVD results in 50 times smoother graphene on copper. Furthermore, the thick copper substrates have at least 5 times larger copper domains, compared to conventionally prepared copper foil. The evolution of the surface roughness in each growth method is also presented.

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Chemical vapor deposition of graphene on large-domain ultra-flat copper

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