Chemical tuning of metal-semiconductor interfaces

D. A. Ricci, T. Miller, T. C. Chiang

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

A study of the Schottky barrier for lead (Pb) films grown on Si surfaces that were terminated by several various metals was discussed. It was found that an angle resolved photoemission was employed to determine the barrier height in each case. The barrier height was determined from the atomic layer resolved energy levels and the line widths. The results show that a calculation based on the known interface chemistry and the electronegativity yields predicted barrier heights in good agreement that were useful for barrier engineering.

Original languageEnglish
Article number136801
Pages (from-to)136801-1-136801-4
JournalPhysical Review Letters
Volume93
Issue number13
DOIs
StatePublished - Sep 24 2004
Externally publishedYes

Funding

This work is supported by the U.S. Department of Energy (Grant No. DEFG02-91ER45439). We acknowledge the Petroleum Research Fund, administered by the American Chemical Society, and the U.S. National Science Foundation (Grant No. DMR-02-03003) for partial support of the synchrotron beamline operation. The Synchrotron Radiation Center of the University of Wisconsin-Madison is supported by the U.S. National Science Foundation (Grant No. DMR-00-84402).

FundersFunder number
National Science FoundationDMR-00-84402, DMR-02-03003
U.S. Department of EnergyDEFG02-91ER45439
American Chemical Society
American Chemical Society Petroleum Research Fund

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