Chemical solution deposition of lanthanum zirconate barrier layers applied to low-cost coated-conductor fabrication

S. Sathyamurthy; M. Paranthaman; H. Y. Zhai; S. Kang; T. Aytug; C. Cantoni; K. J. Leonard; E. A. Payzant; H. M. Christen; A. Goyal; X. Li; U. Schoop; T. Kodenkandath; M. W. Rupich

doi:10.1557/JMR.2004.0281

Chemical solution deposition of lanthanum zirconate barrier layers applied to low-cost coated-conductor fabrication

S. Sathyamurthy, M. Paranthaman, H. Y. Zhai, S. Kang, T. Aytug, C. Cantoni, K. J. Leonard, E. A. Payzant, H. M. Christen, A. Goyal, X. Li, U. Schoop, T. Kodenkandath, M. W. Rupich

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Abstract

Epitaxial lanthanum zirconate (LZO) buffer layers have been grown by sol-gel processing on Ni-W substrates. We report on the application of these oxide films as seed and barrier layers in coated conductor fabrication as potentially simpler, lower cost coated-conductor architecture. The LZO films, about 80-100-nm thick, were found to have dense, crack-free surfaces with high surface crystallinity. Using 0.2-μm YBCO deposited by pulsed laser deposition, a critical current density of 2 MA/cm² has been demonstrated on the LZO films (YBCO/LZO/Ni-W). Using 0.8-μm YBCO deposited using metal organic decomposition, a critical current density of 1.7 MA/cm² and a critical current of 135 A/cm have been demonstrated on the LZO barrier layer with a sputtered CeO₂ cap layer (YBCO/CeO₂/LZO/Ni-W). These results offer promise to replace several of the vacuum-deposited layers in the typical coated conductor architecture (YBCO/CeO₂/YSZ/Y₂O₃/Ni/Ni-W).

Original language	English
Pages (from-to)	2117-2123
Number of pages	7
Journal	Journal of Materials Research
Volume	19
Issue number	7
DOIs	https://doi.org/10.1557/JMR.2004.0281
State	Published - Jul 2004

Funding

This project was sponsored by the United States Department of Energy, Office of Electric Transmission and Distribution, Office of Distributed Energy and Electric Reliability–Superconductivity Program. This research was performed at the Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. DOE under contract DE-AC05-00OR22725. Authors H.Y. Zhai, S. Kang, K.J. Leonard, and S. Sathyamurthy extend thanks to Oak Ridge associated universities.

Funders	Funder number
Office of Distributed Energy and Electric Reliability
Office of Electric Transmission and Distribution
U.S. Department of Energy	DE-AC05-00OR22725
Oak Ridge National Laboratory

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10.1557/JMR.2004.0281

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Sathyamurthy, S., Paranthaman, M., Zhai, H. Y., Kang, S., Aytug, T., Cantoni, C., Leonard, K. J., Payzant, E. A., Christen, H. M., Goyal, A., Li, X., Schoop, U., Kodenkandath, T., & Rupich, M. W. (2004). Chemical solution deposition of lanthanum zirconate barrier layers applied to low-cost coated-conductor fabrication. Journal of Materials Research, 19(7), 2117-2123. https://doi.org/10.1557/JMR.2004.0281

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title = "Chemical solution deposition of lanthanum zirconate barrier layers applied to low-cost coated-conductor fabrication",

abstract = "Epitaxial lanthanum zirconate (LZO) buffer layers have been grown by sol-gel processing on Ni-W substrates. We report on the application of these oxide films as seed and barrier layers in coated conductor fabrication as potentially simpler, lower cost coated-conductor architecture. The LZO films, about 80-100-nm thick, were found to have dense, crack-free surfaces with high surface crystallinity. Using 0.2-μm YBCO deposited by pulsed laser deposition, a critical current density of 2 MA/cm2 has been demonstrated on the LZO films (YBCO/LZO/Ni-W). Using 0.8-μm YBCO deposited using metal organic decomposition, a critical current density of 1.7 MA/cm2 and a critical current of 135 A/cm have been demonstrated on the LZO barrier layer with a sputtered CeO2 cap layer (YBCO/CeO2/LZO/Ni-W). These results offer promise to replace several of the vacuum-deposited layers in the typical coated conductor architecture (YBCO/CeO2/YSZ/Y2O3/Ni/Ni-W).",

author = "S. Sathyamurthy and M. Paranthaman and Zhai, {H. Y.} and S. Kang and T. Aytug and C. Cantoni and Leonard, {K. J.} and Payzant, {E. A.} and Christen, {H. M.} and A. Goyal and X. Li and U. Schoop and T. Kodenkandath and Rupich, {M. W.}",

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Sathyamurthy, S, Paranthaman, M, Zhai, HY, Kang, S, Aytug, T, Cantoni, C, Leonard, KJ, Payzant, EA, Christen, HM, Goyal, A, Li, X, Schoop, U, Kodenkandath, T & Rupich, MW 2004, 'Chemical solution deposition of lanthanum zirconate barrier layers applied to low-cost coated-conductor fabrication', Journal of Materials Research, vol. 19, no. 7, pp. 2117-2123. https://doi.org/10.1557/JMR.2004.0281

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T1 - Chemical solution deposition of lanthanum zirconate barrier layers applied to low-cost coated-conductor fabrication

AU - Sathyamurthy, S.

AU - Paranthaman, M.

AU - Zhai, H. Y.

AU - Kang, S.

AU - Aytug, T.

AU - Cantoni, C.

AU - Leonard, K. J.

AU - Payzant, E. A.

AU - Christen, H. M.

AU - Goyal, A.

AU - Li, X.

AU - Schoop, U.

AU - Kodenkandath, T.

AU - Rupich, M. W.

PY - 2004/7

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N2 - Epitaxial lanthanum zirconate (LZO) buffer layers have been grown by sol-gel processing on Ni-W substrates. We report on the application of these oxide films as seed and barrier layers in coated conductor fabrication as potentially simpler, lower cost coated-conductor architecture. The LZO films, about 80-100-nm thick, were found to have dense, crack-free surfaces with high surface crystallinity. Using 0.2-μm YBCO deposited by pulsed laser deposition, a critical current density of 2 MA/cm2 has been demonstrated on the LZO films (YBCO/LZO/Ni-W). Using 0.8-μm YBCO deposited using metal organic decomposition, a critical current density of 1.7 MA/cm2 and a critical current of 135 A/cm have been demonstrated on the LZO barrier layer with a sputtered CeO2 cap layer (YBCO/CeO2/LZO/Ni-W). These results offer promise to replace several of the vacuum-deposited layers in the typical coated conductor architecture (YBCO/CeO2/YSZ/Y2O3/Ni/Ni-W).

AB - Epitaxial lanthanum zirconate (LZO) buffer layers have been grown by sol-gel processing on Ni-W substrates. We report on the application of these oxide films as seed and barrier layers in coated conductor fabrication as potentially simpler, lower cost coated-conductor architecture. The LZO films, about 80-100-nm thick, were found to have dense, crack-free surfaces with high surface crystallinity. Using 0.2-μm YBCO deposited by pulsed laser deposition, a critical current density of 2 MA/cm2 has been demonstrated on the LZO films (YBCO/LZO/Ni-W). Using 0.8-μm YBCO deposited using metal organic decomposition, a critical current density of 1.7 MA/cm2 and a critical current of 135 A/cm have been demonstrated on the LZO barrier layer with a sputtered CeO2 cap layer (YBCO/CeO2/LZO/Ni-W). These results offer promise to replace several of the vacuum-deposited layers in the typical coated conductor architecture (YBCO/CeO2/YSZ/Y2O3/Ni/Ni-W).

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Chemical solution deposition of lanthanum zirconate barrier layers applied to low-cost coated-conductor fabrication

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