Chemical reactivity of CVC and CVD SiC with UO2at high temperatures

Chinthaka M. Silva; Yutai Katoh; Stewart L. Voit; Lance L. Snead

doi:10.1016/j.jnucmat.2015.02.002

Chemical reactivity of CVC and CVD SiC with UO₂at high temperatures

Chinthaka M. Silva, Yutai Katoh, Stewart L. Voit, Lance L. Snead

Materials Science and Technology Div

Oak Ridge National Laboratory

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO₂ pellets and evaluated for their potential chemical reaction with UO₂. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO₂ was observed at comparatively low temperatures of 1100 and 1300°C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO₂ at a higher temperature (1500°C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500°C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi₂, and U₃Si₂ as a result of SiC reaction with UO₂.

Original language	English
Pages (from-to)	52-59
Number of pages	8
Journal	Journal of Nuclear Materials
Volume	460
DOIs	https://doi.org/10.1016/j.jnucmat.2015.02.002
State	Published - May 2015

Bibliographical note

Publisher Copyright:
© 2015 Published by Elsevier B.V.

Funding

This research work was sponsored by the U.S. Department of Energy through the Office of Nuclear Energy, Science and Technology’s Fuel Cycle Research and Development Program under contract DE-AC05-00OR22725 with UT-Battelle, LLC . This manuscript has been authored by the Oak Ridge National Laboratory , managed by UT-Battelle LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy. The U.S. Government retains and the publisher, by accepting the article for publication, acknowledges that the U.S. Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for U.S. Government purposes.

Funders	Funder number
U.S. Department of Energy	DE-AC05-00OR22725
UT-Battelle

Access to Document

10.1016/j.jnucmat.2015.02.002

Cite this

@article{edf7a1083de6453e97abda359ec5ddce,

title = "Chemical reactivity of CVC and CVD SiC with UO2at high temperatures",

abstract = "Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300°C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500°C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500°C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.",

author = "Silva, {Chinthaka M.} and Yutai Katoh and Voit, {Stewart L.} and Snead, {Lance L.}",

note = "Publisher Copyright: {\textcopyright} 2015 Published by Elsevier B.V.",

year = "2015",

month = may,

doi = "10.1016/j.jnucmat.2015.02.002",

language = "English",

volume = "460",

pages = "52--59",

journal = "Journal of Nuclear Materials",

issn = "0022-3115",

publisher = "Elsevier",

}

TY - JOUR

T1 - Chemical reactivity of CVC and CVD SiC with UO2at high temperatures

AU - Silva, Chinthaka M.

AU - Katoh, Yutai

AU - Voit, Stewart L.

AU - Snead, Lance L.

PY - 2015/5

Y1 - 2015/5

N2 - Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300°C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500°C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500°C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

AB - Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300°C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500°C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500°C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

UR - http://www.scopus.com/inward/record.url?scp=84922867602&partnerID=8YFLogxK

U2 - 10.1016/j.jnucmat.2015.02.002

DO - 10.1016/j.jnucmat.2015.02.002

M3 - Article

AN - SCOPUS:84922867602

SN - 0022-3115

VL - 460

SP - 52

EP - 59

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

ER -