Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing

L. G. Jacobsohn; R. K. Schulze; L. L. Daemen; I. V. Afanasyev-Charkin; M. Nastasi

doi:10.1016/j.tsf.2005.07.166

Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing

L. G. Jacobsohn
, R. K. Schulze
, L. L. Daemen
, I. V. Afanasyev-Charkin
, M. Nastasi

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Amorphous hydrogenated Si-N (a-SiN_x:H) alloys were deposited by plasma immersion ion processing using a working pressure of 1.3 Pa of mixtures of SiH₄ and N₂. Films with N/Si ratios from 0.6 to 1.2 were obtained, as determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERD). A fixed total H content of 9 at.% was observed in all films. Chemical bonding was investigated by infrared, Raman and X-ray photoelectron (XPS) spectroscopies. These techniques revealed a complex Si chemical environment that evolves towards that of Si₃N₄ for higher N/Si ratios. This evolution was correlated with the increase of film hardness.

Original language	English
Pages (from-to)	219-222
Number of pages	4
Journal	Thin Solid Films
Volume	494
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.166
State	Published - Jan 3 2006
Externally published	Yes

Funding

This work was supported by the DOE, Office of Basic Energy Sciences.

Keywords

Chemical bonding
Silicon nitride
X-ray photoelectron microscopy

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10.1016/j.tsf.2005.07.166

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title = "Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing",

abstract = "Amorphous hydrogenated Si-N (a-SiNx:H) alloys were deposited by plasma immersion ion processing using a working pressure of 1.3 Pa of mixtures of SiH4 and N2. Films with N/Si ratios from 0.6 to 1.2 were obtained, as determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERD). A fixed total H content of 9 at.\% was observed in all films. Chemical bonding was investigated by infrared, Raman and X-ray photoelectron (XPS) spectroscopies. These techniques revealed a complex Si chemical environment that evolves towards that of Si3N4 for higher N/Si ratios. This evolution was correlated with the increase of film hardness.",

keywords = "Chemical bonding, Silicon nitride, X-ray photoelectron microscopy",

author = "Jacobsohn, \{L. G.\} and Schulze, \{R. K.\} and Daemen, \{L. L.\} and Afanasyev-Charkin, \{I. V.\} and M. Nastasi",

year = "2006",

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doi = "10.1016/j.tsf.2005.07.166",

language = "English",

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journal = "Thin Solid Films",

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number = "1-2",

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T1 - Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing

AU - Jacobsohn, L. G.

AU - Schulze, R. K.

AU - Daemen, L. L.

AU - Afanasyev-Charkin, I. V.

AU - Nastasi, M.

PY - 2006/1/3

Y1 - 2006/1/3

N2 - Amorphous hydrogenated Si-N (a-SiNx:H) alloys were deposited by plasma immersion ion processing using a working pressure of 1.3 Pa of mixtures of SiH4 and N2. Films with N/Si ratios from 0.6 to 1.2 were obtained, as determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERD). A fixed total H content of 9 at.% was observed in all films. Chemical bonding was investigated by infrared, Raman and X-ray photoelectron (XPS) spectroscopies. These techniques revealed a complex Si chemical environment that evolves towards that of Si3N4 for higher N/Si ratios. This evolution was correlated with the increase of film hardness.

AB - Amorphous hydrogenated Si-N (a-SiNx:H) alloys were deposited by plasma immersion ion processing using a working pressure of 1.3 Pa of mixtures of SiH4 and N2. Films with N/Si ratios from 0.6 to 1.2 were obtained, as determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERD). A fixed total H content of 9 at.% was observed in all films. Chemical bonding was investigated by infrared, Raman and X-ray photoelectron (XPS) spectroscopies. These techniques revealed a complex Si chemical environment that evolves towards that of Si3N4 for higher N/Si ratios. This evolution was correlated with the increase of film hardness.

KW - Chemical bonding

KW - Silicon nitride

KW - X-ray photoelectron microscopy

UR - https://www.scopus.com/pages/publications/27844544730

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DO - 10.1016/j.tsf.2005.07.166

M3 - Article

AN - SCOPUS:27844544730

SN - 0040-6090

VL - 494

SP - 219

EP - 222

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing

Abstract

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