Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing

L. G. Jacobsohn; R. K. Schulze; L. L. Daemen; I. V. Afanasyev-Charkin; M. Nastasi

doi:10.1016/j.tsf.2005.07.166

Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing

L. G. Jacobsohn, R. K. Schulze, L. L. Daemen, I. V. Afanasyev-Charkin, M. Nastasi

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Amorphous hydrogenated Si-N (a-SiN_x:H) alloys were deposited by plasma immersion ion processing using a working pressure of 1.3 Pa of mixtures of SiH₄ and N₂. Films with N/Si ratios from 0.6 to 1.2 were obtained, as determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERD). A fixed total H content of 9 at.% was observed in all films. Chemical bonding was investigated by infrared, Raman and X-ray photoelectron (XPS) spectroscopies. These techniques revealed a complex Si chemical environment that evolves towards that of Si₃N₄ for higher N/Si ratios. This evolution was correlated with the increase of film hardness.

Original language	English
Pages (from-to)	219-222
Number of pages	4
Journal	Thin Solid Films
Volume	494
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.166
State	Published - Jan 3 2006
Externally published	Yes

Funding

This work was supported by the DOE, Office of Basic Energy Sciences.

Funders	Funder number
U.S. Department of Energy
Basic Energy Sciences

Keywords

Chemical bonding
Silicon nitride
X-ray photoelectron microscopy

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10.1016/j.tsf.2005.07.166

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title = "Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing",

abstract = "Amorphous hydrogenated Si-N (a-SiNx:H) alloys were deposited by plasma immersion ion processing using a working pressure of 1.3 Pa of mixtures of SiH4 and N2. Films with N/Si ratios from 0.6 to 1.2 were obtained, as determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERD). A fixed total H content of 9 at.% was observed in all films. Chemical bonding was investigated by infrared, Raman and X-ray photoelectron (XPS) spectroscopies. These techniques revealed a complex Si chemical environment that evolves towards that of Si3N4 for higher N/Si ratios. This evolution was correlated with the increase of film hardness.",

keywords = "Chemical bonding, Silicon nitride, X-ray photoelectron microscopy",

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T1 - Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing

AU - Jacobsohn, L. G.

AU - Schulze, R. K.

AU - Daemen, L. L.

AU - Afanasyev-Charkin, I. V.

AU - Nastasi, M.

PY - 2006/1/3

Y1 - 2006/1/3

N2 - Amorphous hydrogenated Si-N (a-SiNx:H) alloys were deposited by plasma immersion ion processing using a working pressure of 1.3 Pa of mixtures of SiH4 and N2. Films with N/Si ratios from 0.6 to 1.2 were obtained, as determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERD). A fixed total H content of 9 at.% was observed in all films. Chemical bonding was investigated by infrared, Raman and X-ray photoelectron (XPS) spectroscopies. These techniques revealed a complex Si chemical environment that evolves towards that of Si3N4 for higher N/Si ratios. This evolution was correlated with the increase of film hardness.

AB - Amorphous hydrogenated Si-N (a-SiNx:H) alloys were deposited by plasma immersion ion processing using a working pressure of 1.3 Pa of mixtures of SiH4 and N2. Films with N/Si ratios from 0.6 to 1.2 were obtained, as determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERD). A fixed total H content of 9 at.% was observed in all films. Chemical bonding was investigated by infrared, Raman and X-ray photoelectron (XPS) spectroscopies. These techniques revealed a complex Si chemical environment that evolves towards that of Si3N4 for higher N/Si ratios. This evolution was correlated with the increase of film hardness.

KW - Chemical bonding

KW - Silicon nitride

KW - X-ray photoelectron microscopy

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Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing

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