Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing

L. G. Jacobsohn; R. K. Schulze; L. L. Daemen; I. V. Afanasyev-Charkin; M. Nastasi

doi:10.1016/j.tsf.2005.07.166

Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing

L. G. Jacobsohn, R. K. Schulze, L. L. Daemen, I. V. Afanasyev-Charkin, M. Nastasi

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3 Scopus citations

Abstract

Amorphous hydrogenated Si-N (a-SiN_x:H) alloys were deposited by plasma immersion ion processing using a working pressure of 1.3 Pa of mixtures of SiH₄ and N₂. Films with N/Si ratios from 0.6 to 1.2 were obtained, as determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERD). A fixed total H content of 9 at.% was observed in all films. Chemical bonding was investigated by infrared, Raman and X-ray photoelectron (XPS) spectroscopies. These techniques revealed a complex Si chemical environment that evolves towards that of Si₃N₄ for higher N/Si ratios. This evolution was correlated with the increase of film hardness.

Original language	English
Pages (from-to)	219-222
Number of pages	4
Journal	Thin Solid Films
Volume	494
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.166
State	Published - Jan 3 2006
Externally published	Yes

Funding

This work was supported by the DOE, Office of Basic Energy Sciences.

Keywords

Chemical bonding
Silicon nitride
X-ray photoelectron microscopy

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10.1016/j.tsf.2005.07.166

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title = "Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing",

abstract = "Amorphous hydrogenated Si-N (a-SiNx:H) alloys were deposited by plasma immersion ion processing using a working pressure of 1.3 Pa of mixtures of SiH4 and N2. Films with N/Si ratios from 0.6 to 1.2 were obtained, as determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERD). A fixed total H content of 9 at.% was observed in all films. Chemical bonding was investigated by infrared, Raman and X-ray photoelectron (XPS) spectroscopies. These techniques revealed a complex Si chemical environment that evolves towards that of Si3N4 for higher N/Si ratios. This evolution was correlated with the increase of film hardness.",

keywords = "Chemical bonding, Silicon nitride, X-ray photoelectron microscopy",

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AU - Jacobsohn, L. G.

AU - Schulze, R. K.

AU - Daemen, L. L.

AU - Afanasyev-Charkin, I. V.

AU - Nastasi, M.

PY - 2006/1/3

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N2 - Amorphous hydrogenated Si-N (a-SiNx:H) alloys were deposited by plasma immersion ion processing using a working pressure of 1.3 Pa of mixtures of SiH4 and N2. Films with N/Si ratios from 0.6 to 1.2 were obtained, as determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERD). A fixed total H content of 9 at.% was observed in all films. Chemical bonding was investigated by infrared, Raman and X-ray photoelectron (XPS) spectroscopies. These techniques revealed a complex Si chemical environment that evolves towards that of Si3N4 for higher N/Si ratios. This evolution was correlated with the increase of film hardness.

AB - Amorphous hydrogenated Si-N (a-SiNx:H) alloys were deposited by plasma immersion ion processing using a working pressure of 1.3 Pa of mixtures of SiH4 and N2. Films with N/Si ratios from 0.6 to 1.2 were obtained, as determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERD). A fixed total H content of 9 at.% was observed in all films. Chemical bonding was investigated by infrared, Raman and X-ray photoelectron (XPS) spectroscopies. These techniques revealed a complex Si chemical environment that evolves towards that of Si3N4 for higher N/Si ratios. This evolution was correlated with the increase of film hardness.

KW - Chemical bonding

KW - Silicon nitride

KW - X-ray photoelectron microscopy

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Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing

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