Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles

E. M. Muller; G. A. Carini; L. Fabris; G. Giacomini; J. Kierstead; S. M. McConchie; D. A. Pinelli; S. Rescia; E. Rossi

doi:10.1016/j.nimb.2025.165778

Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles

E. M. Muller
, G. A. Carini
, L. Fabris
, G. Giacomini
, J. Kierstead
, S. M. McConchie
, D. A. Pinelli
, S. Rescia
, E. Rossi

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

To evaluate the viability of using semiconductors as sensor materials in a detector for the Associated Particle Imaging technique, the radiation hardness of silicon and diamond diodes to alpha particles has been assessed. The detector lifetimes for both silicon and diamond sensors were measured under the prolonged exposure to alpha particles emitted by an ²⁴¹Am source. The silicon detector was exposed to alpha radiation for approximately two months, reaching an accumulated fluence of ∼1.5×10¹²αcm⁻². Additionally, by using a high purity single-crystal diamond with coplanar electrodes operating with full charge collection, the diamond detector response was measured over approximately ten months reaching an accumulated fluence of over 6×10¹²α cm⁻².

Original language	English
Article number	165778
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	566
DOIs	https://doi.org/10.1016/j.nimb.2025.165778
State	Published - Sep 2025

Funding

The authors wish to thank their colleagues at Brookhaven National Laboratory: Ron Angona, Wei Chen, and Sean Robinson for sensor fabrication; Antonio Verderosa, Joe Pinz and Tim Kersten for sensor mounting. This work is supported by the U.S. National Nuclear Security Administration (NNSA) and by the U.S. Department of Energy, United States. This research used resources of the Center for Functional Nanomaterials, which is a U.S. DOE Office of Science Facility, at Brookhaven National Laboratory under Contract No. DE-SC0012704. Part of this research was supported by the U.S. National Nuclear Security Administration (NNSA) Office of Defense Nuclear Nonproliferation Research and Development within the U.S. Department of Energy under Contract AC05-00OR2272.

Keywords

CVD diamond
Diamond sensors
Radiation damage
Silicon sensors

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10.1016/j.nimb.2025.165778

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Muller, E. M., Carini, G. A., Fabris, L., Giacomini, G., Kierstead, J., McConchie, S. M., Pinelli, D. A., Rescia, S., & Rossi, E. (2025). Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 566, Article 165778. https://doi.org/10.1016/j.nimb.2025.165778

@article{ad373c2fbc0e4290983ac7299b14ae99,

title = "Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles",

abstract = "To evaluate the viability of using semiconductors as sensor materials in a detector for the Associated Particle Imaging technique, the radiation hardness of silicon and diamond diodes to alpha particles has been assessed. The detector lifetimes for both silicon and diamond sensors were measured under the prolonged exposure to alpha particles emitted by an 241Am source. The silicon detector was exposed to alpha radiation for approximately two months, reaching an accumulated fluence of ∼1.5×1012αcm−2. Additionally, by using a high purity single-crystal diamond with coplanar electrodes operating with full charge collection, the diamond detector response was measured over approximately ten months reaching an accumulated fluence of over 6×1012α cm−2.",

keywords = "CVD diamond, Diamond sensors, Radiation damage, Silicon sensors",

author = "Muller, \{E. M.\} and Carini, \{G. A.\} and L. Fabris and G. Giacomini and J. Kierstead and McConchie, \{S. M.\} and Pinelli, \{D. A.\} and S. Rescia and E. Rossi",

note = "Publisher Copyright: {\textcopyright} 2025",

year = "2025",

month = sep,

doi = "10.1016/j.nimb.2025.165778",

language = "English",

volume = "566",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

}

Muller, EM, Carini, GA, Fabris, L, Giacomini, G, Kierstead, J, McConchie, SM, Pinelli, DA, Rescia, S & Rossi, E 2025, 'Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 566, 165778. https://doi.org/10.1016/j.nimb.2025.165778

TY - JOUR

T1 - Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles

AU - Muller, E. M.

AU - Carini, G. A.

AU - Fabris, L.

AU - Giacomini, G.

AU - Kierstead, J.

AU - McConchie, S. M.

AU - Pinelli, D. A.

AU - Rescia, S.

AU - Rossi, E.

PY - 2025/9

Y1 - 2025/9

N2 - To evaluate the viability of using semiconductors as sensor materials in a detector for the Associated Particle Imaging technique, the radiation hardness of silicon and diamond diodes to alpha particles has been assessed. The detector lifetimes for both silicon and diamond sensors were measured under the prolonged exposure to alpha particles emitted by an 241Am source. The silicon detector was exposed to alpha radiation for approximately two months, reaching an accumulated fluence of ∼1.5×1012αcm−2. Additionally, by using a high purity single-crystal diamond with coplanar electrodes operating with full charge collection, the diamond detector response was measured over approximately ten months reaching an accumulated fluence of over 6×1012α cm−2.

AB - To evaluate the viability of using semiconductors as sensor materials in a detector for the Associated Particle Imaging technique, the radiation hardness of silicon and diamond diodes to alpha particles has been assessed. The detector lifetimes for both silicon and diamond sensors were measured under the prolonged exposure to alpha particles emitted by an 241Am source. The silicon detector was exposed to alpha radiation for approximately two months, reaching an accumulated fluence of ∼1.5×1012αcm−2. Additionally, by using a high purity single-crystal diamond with coplanar electrodes operating with full charge collection, the diamond detector response was measured over approximately ten months reaching an accumulated fluence of over 6×1012α cm−2.

KW - CVD diamond

KW - Diamond sensors

KW - Radiation damage

KW - Silicon sensors

UR - https://www.scopus.com/pages/publications/105009696036

U2 - 10.1016/j.nimb.2025.165778

DO - 10.1016/j.nimb.2025.165778

M3 - Article

AN - SCOPUS:105009696036

SN - 0168-583X

VL - 566

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

M1 - 165778

ER -

Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles

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