Abstract
Highly-sensitive photovoltaic effect of TiN/Si heterojunction has been reported. The junction exhibited a high photovoltaic sensitivity (PVS) of 57 mV/mW to He-Ne laser illumination when the laser spot was incident onto the Si substrate. The change of Schottky barrier height due to illumination has been discussed. However, when the laser spot was incident on the TiN film surface, the PVS was only 0.71 mV/mW, which was mainly attributed to the low transmittance of TiN film to He-Ne photons. And further, when a UV Hg lamp irradiated the TiN film, the PVS was enhanced much and increased up to 421 mV/mW.
| Original language | English |
|---|---|
| Pages (from-to) | 1174-1177 |
| Number of pages | 4 |
| Journal | Optoelectronics and Advanced Materials, Rapid Communications |
| Volume | 5 |
| Issue number | 11 |
| State | Published - 2011 |
| Externally published | Yes |
Keywords
- Heterojunction
- Photoelectric
- Schottky barrier
