Characterization of SiC trench MOSFETs in a low-inductance power module package

Zhiqiang Wang; Fei Yang; Steven L. Campbell; Madhu Chinthavali

doi:10.1109/TIA.2019.2902839

Characterization of SiC trench MOSFETs in a low-inductance power module package

Zhiqiang Wang, Fei Yang, Steven L. Campbell, Madhu Chinthavali

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

This paper evaluates the temperature-dependent static and switching characteristics of SiC Trench mosfets in a low-inductance multiple-chip power module. First, a phase-leg power module package design with integrated decoupling capacitance is proposed and fabricated based on the P-cell/N-cell concept, and the module design including the substrate layout and packaging material selection are discussed. With the fabricated power module, the temperature-dependent static and switching characteristics of the SiC Trench mosfets are comprehensively investigated, and the key performance differences from the traditional SiC planar mosfets are discussed. Specifically, compared to the SiC mosfets with planar structure, the SiC Trench mosfets are observed to have a different temperature coefficient in term of the turn-off switching loss. Detailed analysis is provided as well to explain the experimental results.

Original language	English
Article number	8658111
Pages (from-to)	4157-4166
Number of pages	10
Journal	IEEE Transactions on Industry Applications
Volume	55
Issue number	4
DOIs	https://doi.org/10.1109/TIA.2019.2902839
State	Published - Jul 1 2019

Funding

Manuscript received August 28, 2018; revised December 26, 2018; accepted February 5, 2019. Date of publication March 4, 2019; date of current version June 29, 2019. Paper 2018-TSC-0931.R1, presented at the 2018 IEEE Applied Power Electronics Conference and Exposition, San Antonio, TX, USA, Mar. 4–8, and approved for publication in the IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS by the Transportation Systems Committee of the IEEE Industry Applications Society. This work was supported in part by the Electric Drive Technologies Program, DOE Vehicle Technologies Office, under Contract DE-AC05-00OR22725 with UT-Battelle, LLC and in part by the Engineering Research Center Shared Facilities supported by the Engineering Research Center Program of the National Science Foundation and the Department of Energy under NSF Award EEC-1041877 and the CURENT Industry Partnership Program. (Corresponding authors: Zhiqiang Wang and Fei Yang.) Z. Wang is with the Power Electronics and Electric Machinery Center, Oak Ridge National Laboratory, Knoxville, TN 37932 USA, and also with the Department of Electrical Engineering and Computer Science, The University of Tennessee, Knoxville, TN 37996 USA (e-mail:,[email protected]).

Keywords

Multiple-chip power module
SiC Trench mosfet
parasitic inductance

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10.1109/TIA.2019.2902839

Cite this

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abstract = "This paper evaluates the temperature-dependent static and switching characteristics of SiC Trench mosfets in a low-inductance multiple-chip power module. First, a phase-leg power module package design with integrated decoupling capacitance is proposed and fabricated based on the P-cell/N-cell concept, and the module design including the substrate layout and packaging material selection are discussed. With the fabricated power module, the temperature-dependent static and switching characteristics of the SiC Trench mosfets are comprehensively investigated, and the key performance differences from the traditional SiC planar mosfets are discussed. Specifically, compared to the SiC mosfets with planar structure, the SiC Trench mosfets are observed to have a different temperature coefficient in term of the turn-off switching loss. Detailed analysis is provided as well to explain the experimental results.",

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AB - This paper evaluates the temperature-dependent static and switching characteristics of SiC Trench mosfets in a low-inductance multiple-chip power module. First, a phase-leg power module package design with integrated decoupling capacitance is proposed and fabricated based on the P-cell/N-cell concept, and the module design including the substrate layout and packaging material selection are discussed. With the fabricated power module, the temperature-dependent static and switching characteristics of the SiC Trench mosfets are comprehensively investigated, and the key performance differences from the traditional SiC planar mosfets are discussed. Specifically, compared to the SiC mosfets with planar structure, the SiC Trench mosfets are observed to have a different temperature coefficient in term of the turn-off switching loss. Detailed analysis is provided as well to explain the experimental results.

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Characterization of SiC trench MOSFETs in a low-inductance power module package

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