Abstract
The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications. In this study, commercial Si pn and SiC Schottky diodes are tested and characterized, their behavioral static and loss models are derived at different temperatures, and they are compared with respect to each other.
| Original language | English |
|---|---|
| Pages (from-to) | 54-57 |
| Number of pages | 4 |
| Journal | IEEE Power Electronics Letters |
| Volume | 1 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jun 2003 |
Funding
Manuscript received July 15, 2003. Recommended by Associate Editor P. Chapman. This work was supported by the Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA, managed by UT-Battelle for the U.S. Department of Energy under Contract DE-AC05-00OR22725.
| Funders | Funder number |
|---|---|
| U.S. Department of Energy | DE-AC05-00OR22725 |
| UT-Battelle |
Keywords
- Loss model
- Schottky diodes
- Silicon carbide
- Temperature