Characterization of SiC Schottky diodes at different temperatures

Burak Ozpineci; Leon M. Tolbert

doi:10.1109/LPEL.2003.821026

Characterization of SiC Schottky diodes at different temperatures

Burak Ozpineci, Leon M. Tolbert

Buildings and Transportation Science Div

University of Tennessee, Knoxville

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications. In this study, commercial Si pn and SiC Schottky diodes are tested and characterized, their behavioral static and loss models are derived at different temperatures, and they are compared with respect to each other.

Original language	English
Pages (from-to)	54-57
Number of pages	4
Journal	IEEE Power Electronics Letters
Volume	1
Issue number	2
DOIs	https://doi.org/10.1109/LPEL.2003.821026
State	Published - Jun 2003

Keywords

Loss model
Schottky diodes
Silicon carbide
Temperature

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10.1109/LPEL.2003.821026

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@article{8c30dc5943bb4f8bbeb30990cac3e4e1,

title = "Characterization of SiC Schottky diodes at different temperatures",

abstract = "The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications. In this study, commercial Si pn and SiC Schottky diodes are tested and characterized, their behavioral static and loss models are derived at different temperatures, and they are compared with respect to each other.",

keywords = "Loss model, Schottky diodes, Silicon carbide, Temperature",

author = "Burak Ozpineci and Tolbert, {Leon M.}",

year = "2003",

month = jun,

doi = "10.1109/LPEL.2003.821026",

language = "English",

volume = "1",

pages = "54--57",

journal = "IEEE Power Electronics Letters",

issn = "1540-7985",

publisher = "Institute of Electrical and Electronics Engineers",

number = "2",

}

TY - JOUR

T1 - Characterization of SiC Schottky diodes at different temperatures

AU - Ozpineci, Burak

AU - Tolbert, Leon M.

PY - 2003/6

Y1 - 2003/6

N2 - The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications. In this study, commercial Si pn and SiC Schottky diodes are tested and characterized, their behavioral static and loss models are derived at different temperatures, and they are compared with respect to each other.

AB - The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications. In this study, commercial Si pn and SiC Schottky diodes are tested and characterized, their behavioral static and loss models are derived at different temperatures, and they are compared with respect to each other.

KW - Loss model

KW - Schottky diodes

KW - Silicon carbide

KW - Temperature

UR - http://www.scopus.com/inward/record.url?scp=2442575184&partnerID=8YFLogxK

U2 - 10.1109/LPEL.2003.821026

DO - 10.1109/LPEL.2003.821026

M3 - Article

AN - SCOPUS:2442575184

SN - 1540-7985

VL - 1

SP - 54

EP - 57

JO - IEEE Power Electronics Letters

JF - IEEE Power Electronics Letters

IS - 2

ER -

Characterization of SiC Schottky diodes at different temperatures

Abstract

Keywords

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