Characterization of Ru electrodes for Ru/(Ba,Sr)TiO3/Ru capacitors

Doo Young Yang; Ki Young Oh; Won Jae Lee; M. Vellaikal; R. R. Woolcott; S. K. Streiffer; A. I. Kingon

Characterization of Ru electrodes for Ru/(Ba,Sr)TiO₃/Ru capacitors

Doo Young Yang, Ki Young Oh, Won Jae Lee, M. Vellaikal, R. R. Woolcott, S. K. Streiffer, A. I. Kingon

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Ion beam sputtered Ru metal films were characterized for use as electrodes on MOCVD (Ba,Sr)TiO₃ in high density DRAMs, where Ru is deposited both on the polysilicon plug and on CVD SiO₂. A wide process space in temperature and time was explored with the aim of achieving the highest degree of texturing, the lowest amount of silicide formation, and the least degradation of the Ru surface under an oxidizing environment. Ru deposited at 375 °C showed primarily (001) texturing, and its surface was stable after a 600 °C, 30 minute oxidation and a 700 °C, 30 minute vacuum anneal. The final surface roughness was found to be 14 nm rms.

Original language	English
Pages	515-518
Number of pages	4
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996

Conference

Conference	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
City	East Brunswick, NJ, USA
Period	08/18/96 → 08/21/96

Cite this

@conference{532e535f64474781811b27a0cf23e4b2,

title = "Characterization of Ru electrodes for Ru/(Ba,Sr)TiO3/Ru capacitors",

abstract = "Ion beam sputtered Ru metal films were characterized for use as electrodes on MOCVD (Ba,Sr)TiO3 in high density DRAMs, where Ru is deposited both on the polysilicon plug and on CVD SiO2. A wide process space in temperature and time was explored with the aim of achieving the highest degree of texturing, the lowest amount of silicide formation, and the least degradation of the Ru surface under an oxidizing environment. Ru deposited at 375 °C showed primarily (001) texturing, and its surface was stable after a 600 °C, 30 minute oxidation and a 700 °C, 30 minute vacuum anneal. The final surface roughness was found to be 14 nm rms.",

author = "Yang, {Doo Young} and Oh, {Ki Young} and Lee, {Won Jae} and M. Vellaikal and Woolcott, {R. R.} and Streiffer, {S. K.} and Kingon, {A. I.}",

year = "1996",

language = "English",

pages = "515--518",

note = "Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) ; Conference date: 18-08-1996 Through 21-08-1996",

}

TY - CONF

T1 - Characterization of Ru electrodes for Ru/(Ba,Sr)TiO3/Ru capacitors

AU - Yang, Doo Young

AU - Oh, Ki Young

AU - Lee, Won Jae

AU - Vellaikal, M.

AU - Woolcott, R. R.

AU - Streiffer, S. K.

AU - Kingon, A. I.

PY - 1996

Y1 - 1996

N2 - Ion beam sputtered Ru metal films were characterized for use as electrodes on MOCVD (Ba,Sr)TiO3 in high density DRAMs, where Ru is deposited both on the polysilicon plug and on CVD SiO2. A wide process space in temperature and time was explored with the aim of achieving the highest degree of texturing, the lowest amount of silicide formation, and the least degradation of the Ru surface under an oxidizing environment. Ru deposited at 375 °C showed primarily (001) texturing, and its surface was stable after a 600 °C, 30 minute oxidation and a 700 °C, 30 minute vacuum anneal. The final surface roughness was found to be 14 nm rms.

AB - Ion beam sputtered Ru metal films were characterized for use as electrodes on MOCVD (Ba,Sr)TiO3 in high density DRAMs, where Ru is deposited both on the polysilicon plug and on CVD SiO2. A wide process space in temperature and time was explored with the aim of achieving the highest degree of texturing, the lowest amount of silicide formation, and the least degradation of the Ru surface under an oxidizing environment. Ru deposited at 375 °C showed primarily (001) texturing, and its surface was stable after a 600 °C, 30 minute oxidation and a 700 °C, 30 minute vacuum anneal. The final surface roughness was found to be 14 nm rms.

UR - http://www.scopus.com/inward/record.url?scp=0030358608&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030358608

SP - 515

EP - 518

T2 - Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)

Y2 - 18 August 1996 through 21 August 1996

ER -

Characterization of Ru electrodes for Ru/(Ba,Sr)TiO₃/Ru capacitors

Abstract

Conference

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