Characterization of metamorphic GaAsP/Si materials and devices for photovoltaic applications

Tyler J. Grassman; Mark R. Brenner; Maria Gonzalez; Andrew M. Carlin; Raymond R. Unocic; Ryan R. Dehoff; Michael J. Mills; Steven A. Ringel

doi:10.1109/TED.2010.2082310

Characterization of metamorphic GaAsP/Si materials and devices for photovoltaic applications

Tyler J. Grassman, Mark R. Brenner, Maria Gonzalez, Andrew M. Carlin, Raymond R. Unocic, Ryan R. Dehoff, Michael J. Mills, Steven A. Ringel

Research output: Contribution to journal › Article › peer-review

101 Scopus citations

Abstract

GaAs_yP_1-y anion-sublattice compositionally graded buffers and device structures were grown directly on Si(100) substrates by way of a high-quality GaP integration layer, yielding GaAsP target layers having band gaps of photovoltaic interest (1.65-1.8 eV), free of antiphase domains/borders, stacking faults, and microtwins. GaAs_yP _1-y growths on both Si and GaP substrates were compared via high-resolution X-ray diffractometry of the metamorphic buffers and deep-level transient spectroscopy (DLTS) of p⁺ - n diodes that are lattice matched to the final buffer layer. Structural analysis indicates highly efficient epitaxial relaxation throughout the entire growth structure for both types of samples and suggests no significant difference in physical behavior between the two types of samples. DLTS measurements performed on GaAsP diodes fabricated on both Si and GaP substrates reveal the existence of identical sets of traps residing in the n-type GaAsP layers in both types of samples: a single majority carrier (electron) trap, which is located at E_C - 0.18 eV, and a single minority carrier (hole) trap, which is located at E_V + 0.71 eV. Prototype 1.75-eV GaAsP solar cell test devices grown on GaAs _yP_1-y/Si buffers show good preliminary performance characteristics and offer great promise for future high-efficiency III-V photovoltaics integrated with Si substrates and devices.

Original language	English
Article number	5608499
Pages (from-to)	3361-3369
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	12
DOIs	https://doi.org/10.1109/TED.2010.2082310
State	Published - Dec 2010

Funding

Manuscript received February 9, 2010; revised September 22, 2010; accepted September 22, 2010. Date of publication October 25, 2010; date of current version November 19, 2010. This work was supported in part by the Army Research Office under Grant DAAD 19-01-0588, by the Air Force Research Laboratory at Kirtland Air Force Base under Grant FA9453-08C-0172, by the Air Force Office of Scientific Research under Grant FA9550-06-1-0557, by the Ohio Wright Center for Photovoltaics Innovation and Commercialization, and by the Intel Corporation. The review of this paper was arranged by Editor P. Panayotatos. Mr. Carlin was the recipient of the NASA Glenn Research Center Graduate Student Research Program Fellowship in 2007.

Funders	Funder number
Air Force Research Laboratory at Kirtland Air Force Base	FA9453-08C-0172
Air Force Office of Scientific Research	FA9550-06-1-0557
Army Research Office	DAAD 19-01-0588
Intel Corporation
Glenn Research Center

Keywords

Epitaxy
GaAsP
GaP
Si
integration
lattice mismatch
metamorphic
photovoltaic
solar cell

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/TED.2010.2082310

Cite this

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title = "Characterization of metamorphic GaAsP/Si materials and devices for photovoltaic applications",

abstract = "GaAsyP1-y anion-sublattice compositionally graded buffers and device structures were grown directly on Si(100) substrates by way of a high-quality GaP integration layer, yielding GaAsP target layers having band gaps of photovoltaic interest (1.65-1.8 eV), free of antiphase domains/borders, stacking faults, and microtwins. GaAsyP 1-y growths on both Si and GaP substrates were compared via high-resolution X-ray diffractometry of the metamorphic buffers and deep-level transient spectroscopy (DLTS) of p+ - n diodes that are lattice matched to the final buffer layer. Structural analysis indicates highly efficient epitaxial relaxation throughout the entire growth structure for both types of samples and suggests no significant difference in physical behavior between the two types of samples. DLTS measurements performed on GaAsP diodes fabricated on both Si and GaP substrates reveal the existence of identical sets of traps residing in the n-type GaAsP layers in both types of samples: a single majority carrier (electron) trap, which is located at EC - 0.18 eV, and a single minority carrier (hole) trap, which is located at EV + 0.71 eV. Prototype 1.75-eV GaAsP solar cell test devices grown on GaAs yP1-y/Si buffers show good preliminary performance characteristics and offer great promise for future high-efficiency III-V photovoltaics integrated with Si substrates and devices.",

keywords = "Epitaxy, GaAsP, GaP, Si, integration, lattice mismatch, metamorphic, photovoltaic, solar cell",

author = "Grassman, {Tyler J.} and Brenner, {Mark R.} and Maria Gonzalez and Carlin, {Andrew M.} and Unocic, {Raymond R.} and Dehoff, {Ryan R.} and Mills, {Michael J.} and Ringel, {Steven A.}",

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AU - Mills, Michael J.

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AB - GaAsyP1-y anion-sublattice compositionally graded buffers and device structures were grown directly on Si(100) substrates by way of a high-quality GaP integration layer, yielding GaAsP target layers having band gaps of photovoltaic interest (1.65-1.8 eV), free of antiphase domains/borders, stacking faults, and microtwins. GaAsyP 1-y growths on both Si and GaP substrates were compared via high-resolution X-ray diffractometry of the metamorphic buffers and deep-level transient spectroscopy (DLTS) of p+ - n diodes that are lattice matched to the final buffer layer. Structural analysis indicates highly efficient epitaxial relaxation throughout the entire growth structure for both types of samples and suggests no significant difference in physical behavior between the two types of samples. DLTS measurements performed on GaAsP diodes fabricated on both Si and GaP substrates reveal the existence of identical sets of traps residing in the n-type GaAsP layers in both types of samples: a single majority carrier (electron) trap, which is located at EC - 0.18 eV, and a single minority carrier (hole) trap, which is located at EV + 0.71 eV. Prototype 1.75-eV GaAsP solar cell test devices grown on GaAs yP1-y/Si buffers show good preliminary performance characteristics and offer great promise for future high-efficiency III-V photovoltaics integrated with Si substrates and devices.

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Characterization of metamorphic GaAsP/Si materials and devices for photovoltaic applications

Abstract

Funding

Keywords

UN SDGs

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