Characterization of large single-crystal gamma-ray detectors of cadmium zinc telluride

A. Burger; M. Groza; Y. Cui; D. Hillman; E. Brewer; A. Bilikiss; G. W. Wright; L. Li; F. Lu; R. B. James

doi:10.1007/s11664-003-0066-6

Characterization of large single-crystal gamma-ray detectors of cadmium zinc telluride

A. Burger, M. Groza, Y. Cui, D. Hillman, E. Brewer, A. Bilikiss, G. W. Wright, L. Li, F. Lu, R. B. James

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

The need for large, room-temperature gamma-ray spectrometers to be fabricated from a single crystalline section of a cadmium zinc telluride (CZT) boule was recently met by progress in crystal growth of high-resistivity material. The characterization of such large crystals provides us with an opportunity to better understand the detector physics and apply characterization techniques, which were difficult to implement and analyze on smaller crystals. In this study, metal-semiconductor-metal, planar-CZT detectors were fabricated from large (approximately 9 × 9 × 6 mm³), CZT single crystals. We have investigated the relationship between the results of the electric-field mapping via Pockels effect, photoconductivity data, and detector performance. Changes in the surface recombination and device characteristics showing departure from symmetry are caused and revealed by variations in the surface preparation.

Original language	English
Pages (from-to)	756-760
Number of pages	5
Journal	Journal of Electronic Materials
Volume	32
Issue number	7
DOIs	https://doi.org/10.1007/s11664-003-0066-6
State	Published - Jul 2003
Externally published	Yes

Funding

We gratefully acknowledge financial support from NASA through the Fisk Center for Photonic Materials and Devices and from Grant Nos. NCC8-133, NCC8-145, and NCC5-286. We also acknowledge support from the NSF-REU program under Grant No. DUE-9987224 and the DOE under Contract No. DE-FG08-98NV13407 through the Office of Nuclear Nonproliferation (NA-22) and DOD/BMDO Grant No. DAAD19-02-1-0003.

Funders	Funder number
BMDO	DAAD19-02-1-0003
Fisk Center for Photonic Materials and Devices	NCC8-133, NCC8-145, NCC5-286
NSF-REU	DUE-9987224
U.S. Department of Defense
U.S. Department of Energy	DE-FG08-98NV13407
National Aeronautics and Space Administration
Office of Defense Nuclear Nonproliferation	NA-22

Keywords

CdZnTe room-temperature detector
Internal electric-field distribution
Photoconductivity
Pockels effect

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10.1007/s11664-003-0066-6

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abstract = "The need for large, room-temperature gamma-ray spectrometers to be fabricated from a single crystalline section of a cadmium zinc telluride (CZT) boule was recently met by progress in crystal growth of high-resistivity material. The characterization of such large crystals provides us with an opportunity to better understand the detector physics and apply characterization techniques, which were difficult to implement and analyze on smaller crystals. In this study, metal-semiconductor-metal, planar-CZT detectors were fabricated from large (approximately 9 × 9 × 6 mm3), CZT single crystals. We have investigated the relationship between the results of the electric-field mapping via Pockels effect, photoconductivity data, and detector performance. Changes in the surface recombination and device characteristics showing departure from symmetry are caused and revealed by variations in the surface preparation.",

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AU - Groza, M.

AU - Cui, Y.

AU - Hillman, D.

AU - Brewer, E.

AU - Bilikiss, A.

AU - Wright, G. W.

AU - Li, L.

AU - Lu, F.

AU - James, R. B.

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AB - The need for large, room-temperature gamma-ray spectrometers to be fabricated from a single crystalline section of a cadmium zinc telluride (CZT) boule was recently met by progress in crystal growth of high-resistivity material. The characterization of such large crystals provides us with an opportunity to better understand the detector physics and apply characterization techniques, which were difficult to implement and analyze on smaller crystals. In this study, metal-semiconductor-metal, planar-CZT detectors were fabricated from large (approximately 9 × 9 × 6 mm3), CZT single crystals. We have investigated the relationship between the results of the electric-field mapping via Pockels effect, photoconductivity data, and detector performance. Changes in the surface recombination and device characteristics showing departure from symmetry are caused and revealed by variations in the surface preparation.

KW - CdZnTe room-temperature detector

KW - Internal electric-field distribution

KW - Photoconductivity

KW - Pockels effect

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ER -

Characterization of large single-crystal gamma-ray detectors of cadmium zinc telluride

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Keywords

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