TY - GEN
T1 - Characterization of dopant diffusion, mobility, activation and deactivation effects for n-type dopants with long-dwell laser spike annealing
AU - Chen, Shaoyin
AU - Wang, Yun
AU - Heidelberger, Christopher
AU - Thompson, Michael
PY - 2011
Y1 - 2011
N2 - N-type dopant activation by long dwell laser spike annealing, and subsequent deactivation during furnace annealing, has been studied using Hall measurements. Carrier activation is improved as the dwell time is increased from 10 to 20ms. For high concentration P junctions, deactivation is observed at temperatures as low as 400°C. However, activation can be fully recovered by a second LSA anneal suggesting that dopant-vacancy complexes formed during deactivation can be reversibly dissolved by LSA.
AB - N-type dopant activation by long dwell laser spike annealing, and subsequent deactivation during furnace annealing, has been studied using Hall measurements. Carrier activation is improved as the dwell time is increased from 10 to 20ms. For high concentration P junctions, deactivation is observed at temperatures as low as 400°C. However, activation can be fully recovered by a second LSA anneal suggesting that dopant-vacancy complexes formed during deactivation can be reversibly dissolved by LSA.
UR - https://www.scopus.com/pages/publications/80052118575
U2 - 10.1109/IWJT.2011.5970016
DO - 10.1109/IWJT.2011.5970016
M3 - Conference contribution
AN - SCOPUS:80052118575
SN - 9781612841328
T3 - Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011
SP - 128
EP - 131
BT - Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011
T2 - 11th International Workshop on Junction Technology, IWJT 2011
Y2 - 9 June 2011 through 10 June 2011
ER -