Characterization of bulk defect response in Cu(In, Ga)Se2 thin-film solar cell using DLTS

Charles W. Warren; D. Westley Miller; Fehmi Yasin; Jennifer T. Heath

doi:10.1109/PVSC.2013.6744122

Characterization of bulk defect response in Cu(In, Ga)Se₂ thin-film solar cell using DLTS

Charles W. Warren, D. Westley Miller, Fehmi Yasin, Jennifer T. Heath

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Deep level transient spectroscopy has been used to study the spatial properties of the N1-admittance feature in Cu(In, Ga)Se₂ devices. By comparison to admittance spectra, the N1-admittance feature has been identified in deep level transient spectra. By varying the filling pulse voltage used to generate the deep level transient spectra, the spatial properties of the N1-admittance feature are determined. In particular, the N1-admittance feature is shown to arise from a uniformly distributed bulk defect in the sample studied.

Original language	English
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	170-173
Number of pages	4
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744122
State	Published - 2013
Externally published	Yes
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: Jun 16 2013 → Jun 21 2013

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	06/16/13 → 06/21/13

Keywords

Amorphous semiconductors
Capacitance measurement
Photovoltaic cells
Semiconductor device measurement
Thin film devices

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2013.6744122

Cite this

Warren, C. W., Miller, D. W., Yasin, F., & Heath, J. T. (2013). Characterization of bulk defect response in Cu(In, Ga)Se₂ thin-film solar cell using DLTS. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 170-173). Article 6744122 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744122

@inproceedings{8fcf7a89adc0431fa323c0e883b66857,

title = "Characterization of bulk defect response in Cu(In, Ga)Se2 thin-film solar cell using DLTS",

abstract = "Deep level transient spectroscopy has been used to study the spatial properties of the N1-admittance feature in Cu(In, Ga)Se2 devices. By comparison to admittance spectra, the N1-admittance feature has been identified in deep level transient spectra. By varying the filling pulse voltage used to generate the deep level transient spectra, the spatial properties of the N1-admittance feature are determined. In particular, the N1-admittance feature is shown to arise from a uniformly distributed bulk defect in the sample studied.",

keywords = "Amorphous semiconductors, Capacitance measurement, Photovoltaic cells, Semiconductor device measurement, Thin film devices",

author = "Warren, {Charles W.} and Miller, {D. Westley} and Fehmi Yasin and Heath, {Jennifer T.}",

year = "2013",

doi = "10.1109/PVSC.2013.6744122",

language = "English",

isbn = "9781479932993",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "170--173",

booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

}

Warren, CW, Miller, DW, Yasin, F & Heath, JT 2013, Characterization of bulk defect response in Cu(In, Ga)Se₂ thin-film solar cell using DLTS. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744122, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 170-173, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 06/16/13. https://doi.org/10.1109/PVSC.2013.6744122

Characterization of bulk defect response in Cu(In, Ga)Se₂ thin-film solar cell using DLTS. / Warren, Charles W.; Miller, D. Westley; Yasin, Fehmi et al.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 170-173 6744122 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterization of bulk defect response in Cu(In, Ga)Se2 thin-film solar cell using DLTS

AU - Warren, Charles W.

AU - Miller, D. Westley

AU - Yasin, Fehmi

AU - Heath, Jennifer T.

PY - 2013

Y1 - 2013

N2 - Deep level transient spectroscopy has been used to study the spatial properties of the N1-admittance feature in Cu(In, Ga)Se2 devices. By comparison to admittance spectra, the N1-admittance feature has been identified in deep level transient spectra. By varying the filling pulse voltage used to generate the deep level transient spectra, the spatial properties of the N1-admittance feature are determined. In particular, the N1-admittance feature is shown to arise from a uniformly distributed bulk defect in the sample studied.

AB - Deep level transient spectroscopy has been used to study the spatial properties of the N1-admittance feature in Cu(In, Ga)Se2 devices. By comparison to admittance spectra, the N1-admittance feature has been identified in deep level transient spectra. By varying the filling pulse voltage used to generate the deep level transient spectra, the spatial properties of the N1-admittance feature are determined. In particular, the N1-admittance feature is shown to arise from a uniformly distributed bulk defect in the sample studied.

KW - Amorphous semiconductors

KW - Capacitance measurement

KW - Photovoltaic cells

KW - Semiconductor device measurement

KW - Thin film devices

UR - http://www.scopus.com/inward/record.url?scp=84896455385&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2013.6744122

DO - 10.1109/PVSC.2013.6744122

M3 - Conference contribution

AN - SCOPUS:84896455385

SN - 9781479932993

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 170

EP - 173

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Warren CW, Miller DW, Yasin F, Heath JT. Characterization of bulk defect response in Cu(In, Ga)Se₂ thin-film solar cell using DLTS. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 170-173. 6744122. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2013.6744122