Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis

M. J. Paulus; C. I. Huang; C. A. Bozada; M. E. Cheney; S. C. Dudley; C. E. Stutz; K. R. Evans; R. L. Jones

doi:10.1063/1.341194

Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis

M. J. Paulus
, C. I. Huang
, C. A. Bozada
, M. E. Cheney
, S. C. Dudley
, C. E. Stutz
, K. R. Evans
, R. L. Jones

Research output: Contribution to journal › Article › peer-review

Abstract

Electrical barrier height measurements on n⁺-GaAs-insulator-n- GaAs structures with short-period AlAs/GaAs superlattices forming the insulator show the effective conduction-band discontinuity (ΔE_C) of a superlattice barrier (SLB) to be defined by the lowest superlattice energy state. Five structures with different AlAs and GaAs SLB layer thicknesses are investigated. A SLB with GaAs layers greater than 10 monolayers is found to have a ΔE_C defined by Γ-valley states in the GaAs layers, while a SLB with GaAs and AlAs layers less than 10 monolayers and with thicker AlAs layers than GaAs layers is found to have a ΔE_C defined by X-valley states in the AlAs layers. The SLB with GaAs and AlAs layers less than 10 monolayers and thicker GaAs layers than AlAs layers behaves as a random alloy. Negative differential resistance is observed in the current-voltage characteristic of the sample whose barrier height is defined by Γ-valley states in the GaAs layers.

Original language	English
Pages (from-to)	4765-4767
Number of pages	3
Journal	Journal of Applied Physics
Volume	64
Issue number	9
DOIs	https://doi.org/10.1063/1.341194
State	Published - 1988
Externally published	Yes

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10.1063/1.341194

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title = "Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis",

abstract = "Electrical barrier height measurements on n+-GaAs-insulator-n- GaAs structures with short-period AlAs/GaAs superlattices forming the insulator show the effective conduction-band discontinuity (ΔEC) of a superlattice barrier (SLB) to be defined by the lowest superlattice energy state. Five structures with different AlAs and GaAs SLB layer thicknesses are investigated. A SLB with GaAs layers greater than 10 monolayers is found to have a ΔEC defined by Γ-valley states in the GaAs layers, while a SLB with GaAs and AlAs layers less than 10 monolayers and with thicker AlAs layers than GaAs layers is found to have a ΔEC defined by X-valley states in the AlAs layers. The SLB with GaAs and AlAs layers less than 10 monolayers and thicker GaAs layers than AlAs layers behaves as a random alloy. Negative differential resistance is observed in the current-voltage characteristic of the sample whose barrier height is defined by Γ-valley states in the GaAs layers.",

author = "Paulus, \{M. J.\} and Huang, \{C. I.\} and Bozada, \{C. A.\} and Cheney, \{M. E.\} and Dudley, \{S. C.\} and Stutz, \{C. E.\} and Evans, \{K. R.\} and Jones, \{R. L.\}",

year = "1988",

doi = "10.1063/1.341194",

language = "English",

volume = "64",

pages = "4765--4767",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

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TY - JOUR

T1 - Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis

AU - Paulus, M. J.

AU - Huang, C. I.

AU - Bozada, C. A.

AU - Cheney, M. E.

AU - Dudley, S. C.

AU - Stutz, C. E.

AU - Evans, K. R.

AU - Jones, R. L.

PY - 1988

Y1 - 1988

N2 - Electrical barrier height measurements on n+-GaAs-insulator-n- GaAs structures with short-period AlAs/GaAs superlattices forming the insulator show the effective conduction-band discontinuity (ΔEC) of a superlattice barrier (SLB) to be defined by the lowest superlattice energy state. Five structures with different AlAs and GaAs SLB layer thicknesses are investigated. A SLB with GaAs layers greater than 10 monolayers is found to have a ΔEC defined by Γ-valley states in the GaAs layers, while a SLB with GaAs and AlAs layers less than 10 monolayers and with thicker AlAs layers than GaAs layers is found to have a ΔEC defined by X-valley states in the AlAs layers. The SLB with GaAs and AlAs layers less than 10 monolayers and thicker GaAs layers than AlAs layers behaves as a random alloy. Negative differential resistance is observed in the current-voltage characteristic of the sample whose barrier height is defined by Γ-valley states in the GaAs layers.

AB - Electrical barrier height measurements on n+-GaAs-insulator-n- GaAs structures with short-period AlAs/GaAs superlattices forming the insulator show the effective conduction-band discontinuity (ΔEC) of a superlattice barrier (SLB) to be defined by the lowest superlattice energy state. Five structures with different AlAs and GaAs SLB layer thicknesses are investigated. A SLB with GaAs layers greater than 10 monolayers is found to have a ΔEC defined by Γ-valley states in the GaAs layers, while a SLB with GaAs and AlAs layers less than 10 monolayers and with thicker AlAs layers than GaAs layers is found to have a ΔEC defined by X-valley states in the AlAs layers. The SLB with GaAs and AlAs layers less than 10 monolayers and thicker GaAs layers than AlAs layers behaves as a random alloy. Negative differential resistance is observed in the current-voltage characteristic of the sample whose barrier height is defined by Γ-valley states in the GaAs layers.

UR - https://www.scopus.com/pages/publications/36549103602

U2 - 10.1063/1.341194

DO - 10.1063/1.341194

M3 - Article

AN - SCOPUS:36549103602

SN - 0021-8979

VL - 64

SP - 4765

EP - 4767

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis

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