Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis

M. J. Paulus; C. I. Huang; C. A. Bozada; M. E. Cheney; S. C. Dudley; C. E. Stutz; K. R. Evans; R. L. Jones

doi:10.1063/1.341194

Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis

M. J. Paulus, C. I. Huang, C. A. Bozada, M. E. Cheney, S. C. Dudley, C. E. Stutz, K. R. Evans, R. L. Jones

Research output: Contribution to journal › Article › peer-review

Abstract

Electrical barrier height measurements on n⁺-GaAs-insulator-n- GaAs structures with short-period AlAs/GaAs superlattices forming the insulator show the effective conduction-band discontinuity (ΔE_C) of a superlattice barrier (SLB) to be defined by the lowest superlattice energy state. Five structures with different AlAs and GaAs SLB layer thicknesses are investigated. A SLB with GaAs layers greater than 10 monolayers is found to have a ΔE_C defined by Γ-valley states in the GaAs layers, while a SLB with GaAs and AlAs layers less than 10 monolayers and with thicker AlAs layers than GaAs layers is found to have a ΔE_C defined by X-valley states in the AlAs layers. The SLB with GaAs and AlAs layers less than 10 monolayers and thicker GaAs layers than AlAs layers behaves as a random alloy. Negative differential resistance is observed in the current-voltage characteristic of the sample whose barrier height is defined by Γ-valley states in the GaAs layers.

Original language	English
Pages (from-to)	4765-4767
Number of pages	3
Journal	Journal of Applied Physics
Volume	64
Issue number	9
DOIs	https://doi.org/10.1063/1.341194
State	Published - 1988
Externally published	Yes

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title = "Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis",

abstract = "Electrical barrier height measurements on n+-GaAs-insulator-n- GaAs structures with short-period AlAs/GaAs superlattices forming the insulator show the effective conduction-band discontinuity (ΔEC) of a superlattice barrier (SLB) to be defined by the lowest superlattice energy state. Five structures with different AlAs and GaAs SLB layer thicknesses are investigated. A SLB with GaAs layers greater than 10 monolayers is found to have a ΔEC defined by Γ-valley states in the GaAs layers, while a SLB with GaAs and AlAs layers less than 10 monolayers and with thicker AlAs layers than GaAs layers is found to have a ΔEC defined by X-valley states in the AlAs layers. The SLB with GaAs and AlAs layers less than 10 monolayers and thicker GaAs layers than AlAs layers behaves as a random alloy. Negative differential resistance is observed in the current-voltage characteristic of the sample whose barrier height is defined by Γ-valley states in the GaAs layers.",

author = "Paulus, {M. J.} and Huang, {C. I.} and Bozada, {C. A.} and Cheney, {M. E.} and Dudley, {S. C.} and Stutz, {C. E.} and Evans, {K. R.} and Jones, {R. L.}",

year = "1988",

doi = "10.1063/1.341194",

language = "English",

volume = "64",

pages = "4765--4767",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis

AU - Paulus, M. J.

AU - Huang, C. I.

AU - Bozada, C. A.

AU - Cheney, M. E.

AU - Dudley, S. C.

AU - Stutz, C. E.

AU - Evans, K. R.

AU - Jones, R. L.

PY - 1988

Y1 - 1988

N2 - Electrical barrier height measurements on n+-GaAs-insulator-n- GaAs structures with short-period AlAs/GaAs superlattices forming the insulator show the effective conduction-band discontinuity (ΔEC) of a superlattice barrier (SLB) to be defined by the lowest superlattice energy state. Five structures with different AlAs and GaAs SLB layer thicknesses are investigated. A SLB with GaAs layers greater than 10 monolayers is found to have a ΔEC defined by Γ-valley states in the GaAs layers, while a SLB with GaAs and AlAs layers less than 10 monolayers and with thicker AlAs layers than GaAs layers is found to have a ΔEC defined by X-valley states in the AlAs layers. The SLB with GaAs and AlAs layers less than 10 monolayers and thicker GaAs layers than AlAs layers behaves as a random alloy. Negative differential resistance is observed in the current-voltage characteristic of the sample whose barrier height is defined by Γ-valley states in the GaAs layers.

AB - Electrical barrier height measurements on n+-GaAs-insulator-n- GaAs structures with short-period AlAs/GaAs superlattices forming the insulator show the effective conduction-band discontinuity (ΔEC) of a superlattice barrier (SLB) to be defined by the lowest superlattice energy state. Five structures with different AlAs and GaAs SLB layer thicknesses are investigated. A SLB with GaAs layers greater than 10 monolayers is found to have a ΔEC defined by Γ-valley states in the GaAs layers, while a SLB with GaAs and AlAs layers less than 10 monolayers and with thicker AlAs layers than GaAs layers is found to have a ΔEC defined by X-valley states in the AlAs layers. The SLB with GaAs and AlAs layers less than 10 monolayers and thicker GaAs layers than AlAs layers behaves as a random alloy. Negative differential resistance is observed in the current-voltage characteristic of the sample whose barrier height is defined by Γ-valley states in the GaAs layers.

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DO - 10.1063/1.341194

M3 - Article

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VL - 64

SP - 4765

EP - 4767

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis

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