TY - GEN
T1 - Characterization and modeling of silicon carbide power devices and paralleling operation
AU - Cui, Yutian
AU - Chinthavali, Madhu S.
AU - Xu, Fan
AU - Tolbert, Leon M.
PY - 2012
Y1 - 2012
N2 - This paper presents recent research on several silicon carbide (SiC) power devices. The devices have been tested for both static and dynamic characteristics, which show the advantages over their Si counterparts. The temperature dependency of these characteristics has also been presented in this paper. Then, simulation work of paralleling operation of SiC power MOSFETs based on a verified device model in Pspice is presented to show the impact of parasitics in the circuit on the switching performance.
AB - This paper presents recent research on several silicon carbide (SiC) power devices. The devices have been tested for both static and dynamic characteristics, which show the advantages over their Si counterparts. The temperature dependency of these characteristics has also been presented in this paper. Then, simulation work of paralleling operation of SiC power MOSFETs based on a verified device model in Pspice is presented to show the impact of parasitics in the circuit on the switching performance.
UR - http://www.scopus.com/inward/record.url?scp=84864851280&partnerID=8YFLogxK
U2 - 10.1109/ISIE.2012.6237089
DO - 10.1109/ISIE.2012.6237089
M3 - Conference contribution
AN - SCOPUS:84864851280
SN - 9781467301589
T3 - IEEE International Symposium on Industrial Electronics
SP - 228
EP - 233
BT - Proceedings - 2012 IEEE International Symposium on Industrial Electronics, ISIE 2012
T2 - 21st IEEE International Symposium on Industrial Electronics, ISIE 2012
Y2 - 28 May 2012 through 31 May 2012
ER -