Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures

Saeed Anwar; Zhiqiang Jack Wang; Madhu Chinthavali

doi:10.1109/ITEC.2018.8450223

Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures

Saeed Anwar, Zhiqiang Jack Wang, Madhu Chinthavali

Electrification and Energy Infrastructur

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

In this paper, the static and dynamic characteristics of discrete 650 V and 1200 V trench TO 247 SiC MOSFET is evaluated and compared with a similar current rating 1200 V planar gate discrete TO 247 SiC MOSFET. The new trench MOSFET has promising application for vehicle charging and auxiliary power supply application due to the lower on-state resistance and lower capacitance. Static characteristics for these devices are evaluated using a curve tracer for different device junction temperature A common double pulse test (DPT) platform is developed to evaluate the switching loss at different device junction temperature ranging from 25°C to 175°C. The experimental setup and results are presented for different load currents and temperature.

Original language	English
Title of host publication	2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	956-960
Number of pages	5
ISBN (Print)	9781538630488
DOIs	https://doi.org/10.1109/ITEC.2018.8450223
State	Published - Aug 28 2018
Event	2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018 - Long Beach, United States Duration: Jun 13 2018 → Jun 15 2018

Publication series

Name	2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018

Conference

Conference	2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018
Country/Territory	United States
City	Long Beach
Period	06/13/18 → 06/15/18

Access to Document

10.1109/ITEC.2018.8450223

Cite this

Anwar, S., Wang, Z. J., & Chinthavali, M. (2018). Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures. In 2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018 (pp. 956-960). Article 8450223 (2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ITEC.2018.8450223

Anwar, Saeed ; Wang, Zhiqiang Jack ; Chinthavali, Madhu. / Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures. 2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 956-960 (2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018).

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title = "Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures",

abstract = "In this paper, the static and dynamic characteristics of discrete 650 V and 1200 V trench TO 247 SiC MOSFET is evaluated and compared with a similar current rating 1200 V planar gate discrete TO 247 SiC MOSFET. The new trench MOSFET has promising application for vehicle charging and auxiliary power supply application due to the lower on-state resistance and lower capacitance. Static characteristics for these devices are evaluated using a curve tracer for different device junction temperature A common double pulse test (DPT) platform is developed to evaluate the switching loss at different device junction temperature ranging from 25°C to 175°C. The experimental setup and results are presented for different load currents and temperature.",

author = "Saeed Anwar and Wang, {Zhiqiang Jack} and Madhu Chinthavali",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018 ; Conference date: 13-06-2018 Through 15-06-2018",

year = "2018",

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doi = "10.1109/ITEC.2018.8450223",

language = "English",

isbn = "9781538630488",

series = "2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018",

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Anwar, S, Wang, ZJ & Chinthavali, M 2018, Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures. in 2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018., 8450223, 2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018, Institute of Electrical and Electronics Engineers Inc., pp. 956-960, 2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018, Long Beach, United States, 06/13/18. https://doi.org/10.1109/ITEC.2018.8450223

Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures. / Anwar, Saeed; Wang, Zhiqiang Jack; Chinthavali, Madhu.
2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 956-960 8450223 (2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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PY - 2018/8/28

Y1 - 2018/8/28

N2 - In this paper, the static and dynamic characteristics of discrete 650 V and 1200 V trench TO 247 SiC MOSFET is evaluated and compared with a similar current rating 1200 V planar gate discrete TO 247 SiC MOSFET. The new trench MOSFET has promising application for vehicle charging and auxiliary power supply application due to the lower on-state resistance and lower capacitance. Static characteristics for these devices are evaluated using a curve tracer for different device junction temperature A common double pulse test (DPT) platform is developed to evaluate the switching loss at different device junction temperature ranging from 25°C to 175°C. The experimental setup and results are presented for different load currents and temperature.

AB - In this paper, the static and dynamic characteristics of discrete 650 V and 1200 V trench TO 247 SiC MOSFET is evaluated and compared with a similar current rating 1200 V planar gate discrete TO 247 SiC MOSFET. The new trench MOSFET has promising application for vehicle charging and auxiliary power supply application due to the lower on-state resistance and lower capacitance. Static characteristics for these devices are evaluated using a curve tracer for different device junction temperature A common double pulse test (DPT) platform is developed to evaluate the switching loss at different device junction temperature ranging from 25°C to 175°C. The experimental setup and results are presented for different load currents and temperature.

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Anwar S, Wang ZJ, Chinthavali M. Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures. In 2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 956-960. 8450223. (2018 IEEE Transportation and Electrification Conference and Expo, ITEC 2018). doi: 10.1109/ITEC.2018.8450223

Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures

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