Characterization and comparison of planar and trench Silicon Carbide (SiC) power MOSFETs

Zhiqiang Wang; Madhu Chinthavali; Steven Campbell

doi:10.1149/07512.0145ecst

Characterization and comparison of planar and trench Silicon Carbide (SiC) power MOSFETs

Zhiqiang Wang, Madhu Chinthavali, Steven Campbell

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

This paper presents a comprehensive evaluation and experimental comparison of silicon carbide power MOSFETs through double pulse test. First, a universal hardware platform is designed and developed to test power semiconductor devices with various device packages and measuring requirements. Using the developed platform, the static characteristics and switching performance of the two types of SiC MOSFETs (one planar and one trench type) are evaluated under different case temperatures from 25°C to 175°C. Based on the evaluation data, a comparison of both SiC MOSFETs is conducted in terms of their on-state resistance, switching loss, and temperature dependent behavior. It is found that the latest trench SiC MOSFETs present similar switching loss while much lower conduction loss compared to existing commercial planar SiC MOSFETs. Moreover, the trench devices show a nearly temperature independent switching loss, which is beneficial to suppress the potential thermal runaway issue under high temperature continuous operation.

Original language	English
Title of host publication	Gallium Nitride and Silicon Carbide Power Technologies 6
Editors	M. Dudley, M. Bakowski, N. Ohtani, K. Shenai, B. Raghothamachar
Publisher	Electrochemical Society Inc.
Pages	145-152
Number of pages	8
Edition	12
ISBN (Electronic)	9781607687290, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOIs	https://doi.org/10.1149/07512.0145ecst
State	Published - 2016
Event	Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: Oct 2 2016 → Oct 7 2016

Publication series

Name	ECS Transactions
Number	12
Volume	75
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	10/2/16 → 10/7/16

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10.1149/07512.0145ecst

Cite this

Wang, Z., Chinthavali, M., & Campbell, S. (2016). Characterization and comparison of planar and trench Silicon Carbide (SiC) power MOSFETs. In M. Dudley, M. Bakowski, N. Ohtani, K. Shenai, & B. Raghothamachar (Eds.), Gallium Nitride and Silicon Carbide Power Technologies 6 (12 ed., pp. 145-152). (ECS Transactions; Vol. 75, No. 12). Electrochemical Society Inc.. https://doi.org/10.1149/07512.0145ecst

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title = "Characterization and comparison of planar and trench Silicon Carbide (SiC) power MOSFETs",

abstract = "This paper presents a comprehensive evaluation and experimental comparison of silicon carbide power MOSFETs through double pulse test. First, a universal hardware platform is designed and developed to test power semiconductor devices with various device packages and measuring requirements. Using the developed platform, the static characteristics and switching performance of the two types of SiC MOSFETs (one planar and one trench type) are evaluated under different case temperatures from 25°C to 175°C. Based on the evaluation data, a comparison of both SiC MOSFETs is conducted in terms of their on-state resistance, switching loss, and temperature dependent behavior. It is found that the latest trench SiC MOSFETs present similar switching loss while much lower conduction loss compared to existing commercial planar SiC MOSFETs. Moreover, the trench devices show a nearly temperature independent switching loss, which is beneficial to suppress the potential thermal runaway issue under high temperature continuous operation.",

author = "Zhiqiang Wang and Madhu Chinthavali and Steven Campbell",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",

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doi = "10.1149/07512.0145ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

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}

Wang, Z, Chinthavali, M & Campbell, S 2016, Characterization and comparison of planar and trench Silicon Carbide (SiC) power MOSFETs. in M Dudley, M Bakowski, N Ohtani, K Shenai & B Raghothamachar (eds), Gallium Nitride and Silicon Carbide Power Technologies 6. 12 edn, ECS Transactions, no. 12, vol. 75, Electrochemical Society Inc., pp. 145-152, Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 10/2/16. https://doi.org/10.1149/07512.0145ecst

Characterization and comparison of planar and trench Silicon Carbide (SiC) power MOSFETs. / Wang, Zhiqiang; Chinthavali, Madhu ; Campbell, Steven.
Gallium Nitride and Silicon Carbide Power Technologies 6. ed. / M. Dudley; M. Bakowski; N. Ohtani; K. Shenai; B. Raghothamachar. 12. ed. Electrochemical Society Inc., 2016. p. 145-152 (ECS Transactions; Vol. 75, No. 12).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Characterization and comparison of planar and trench Silicon Carbide (SiC) power MOSFETs

AU - Wang, Zhiqiang

AU - Chinthavali, Madhu

AU - Campbell, Steven

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2016

Y1 - 2016

N2 - This paper presents a comprehensive evaluation and experimental comparison of silicon carbide power MOSFETs through double pulse test. First, a universal hardware platform is designed and developed to test power semiconductor devices with various device packages and measuring requirements. Using the developed platform, the static characteristics and switching performance of the two types of SiC MOSFETs (one planar and one trench type) are evaluated under different case temperatures from 25°C to 175°C. Based on the evaluation data, a comparison of both SiC MOSFETs is conducted in terms of their on-state resistance, switching loss, and temperature dependent behavior. It is found that the latest trench SiC MOSFETs present similar switching loss while much lower conduction loss compared to existing commercial planar SiC MOSFETs. Moreover, the trench devices show a nearly temperature independent switching loss, which is beneficial to suppress the potential thermal runaway issue under high temperature continuous operation.

AB - This paper presents a comprehensive evaluation and experimental comparison of silicon carbide power MOSFETs through double pulse test. First, a universal hardware platform is designed and developed to test power semiconductor devices with various device packages and measuring requirements. Using the developed platform, the static characteristics and switching performance of the two types of SiC MOSFETs (one planar and one trench type) are evaluated under different case temperatures from 25°C to 175°C. Based on the evaluation data, a comparison of both SiC MOSFETs is conducted in terms of their on-state resistance, switching loss, and temperature dependent behavior. It is found that the latest trench SiC MOSFETs present similar switching loss while much lower conduction loss compared to existing commercial planar SiC MOSFETs. Moreover, the trench devices show a nearly temperature independent switching loss, which is beneficial to suppress the potential thermal runaway issue under high temperature continuous operation.

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BT - Gallium Nitride and Silicon Carbide Power Technologies 6

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Y2 - 2 October 2016 through 7 October 2016

ER -

Characterization and comparison of planar and trench Silicon Carbide (SiC) power MOSFETs

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