Characteristics of Pt/SrBi 2Ta 2O 9/Y 2O 3/Si ferroelectric gate capacitors

Ho Nyung Lee, Yong Tae Kim, Sung Ho Choh

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

We have fabricated metal/ferroelectric/insulator/semiconductor (MEFIS) capacitors using Pt, SrBi 2Ta 2O 9 (SBT), and Y 2O 3 thin films. As a buffer layer between the ferroelectric and the Si substrate, a Y 2O 3 film is rf-sputtered on the Si substrate and crystallized along the [111] direction during the annealing process. The dielectric constant and the interface trap charge density of the Y 2O 3 film are about 9 and 2×10 11 eV -1·cm -2, respectively. The SBT thin films deposited on both Si(100) and Y 2O 3(222)/Si(100) by using metal organic deposition (MOD) show similar diffraction patterns with randomly oriented polycrystalline phases. The MEFIS capacitors show good ferroelectric hysteresis arising from the polarization switching properties. The memory window in the capacitance-voltage (C-V) curve and the leakage-current density of Pt/SBT(180 nm)/Y 2O 3(16 nm)/SiO 2(4 nm)/Si are 3.08 V and 6.7×10 -8 A/cm 2, respectively, at a gate voltage of 5 V.

Original languageEnglish
Pages (from-to)454-458
Number of pages5
JournalJournal of the Korean Physical Society
Volume34
Issue number5
StatePublished - 1999
Externally publishedYes

Fingerprint

Dive into the research topics of 'Characteristics of Pt/SrBi 2Ta 2O 9/Y 2O 3/Si ferroelectric gate capacitors'. Together they form a unique fingerprint.

Cite this