Characteristics of Pt Schottky contacts on hydrogen peroxide-treated n-type ZnO(0001) layers

Sang Ho Kim; Han Ki Kim; Seong Wook Jeong; Tae Yeon Seong

doi:10.1016/j.spmi.2005.08.044

Characteristics of Pt Schottky contacts on hydrogen peroxide-treated n-type ZnO(0001) layers

Sang Ho Kim, Han Ki Kim, Seong Wook Jeong, Tae Yeon Seong

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

The effect of hydrogen peroxide (H₂O₂) treatment on the characteristics of Pt Schottky contacts to n-type ZnO(0001) layers (8×10¹⁶-2×10¹⁷ cm^-3) has been investigated. Pt contacts on conventional organic solvent-cleaned ZnO show fairly leaky behaviour with a leakage current of -0.05 A under -5 V, while Pt contacts on H₂O₂-treated ZnO give good Schottky behaviour with a leakage current of -6.5×10^-8 A under -5 V. Schottky barrier heights extracted from the current-voltage characteristics are in the range 0.88-0.97 eV depending on the ideality factors. Room temperature photoluminescence results show that the hydrogen peroxide treatment is fairly effective in removing deep-level defects near the ZnO surface region.

Original language	English
Pages (from-to)	211-217
Number of pages	7
Journal	Superlattices and Microstructures
Volume	39
Issue number	1-4
DOIs	https://doi.org/10.1016/j.spmi.2005.08.044
State	Published - Jan 2006
Externally published	Yes
Event	E-MRS 2005 Symposium G: ZnO and Related Materials Part 2 - Duration: May 31 2005 → Jun 3 2005

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@article{b0dad63edff54af084b1b827e4fbbe66,

title = "Characteristics of Pt Schottky contacts on hydrogen peroxide-treated n-type ZnO(0001) layers",

abstract = "The effect of hydrogen peroxide (H2O2) treatment on the characteristics of Pt Schottky contacts to n-type ZnO(0001) layers (8×1016-2×1017 cm-3) has been investigated. Pt contacts on conventional organic solvent-cleaned ZnO show fairly leaky behaviour with a leakage current of -0.05 A under -5 V, while Pt contacts on H2O2-treated ZnO give good Schottky behaviour with a leakage current of -6.5×10-8 A under -5 V. Schottky barrier heights extracted from the current-voltage characteristics are in the range 0.88-0.97 eV depending on the ideality factors. Room temperature photoluminescence results show that the hydrogen peroxide treatment is fairly effective in removing deep-level defects near the ZnO surface region.",

author = "Kim, \{Sang Ho\} and Kim, \{Han Ki\} and Jeong, \{Seong Wook\} and Seong, \{Tae Yeon\}",

year = "2006",

month = jan,

doi = "10.1016/j.spmi.2005.08.044",

language = "English",

volume = "39",

pages = "211--217",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Elsevier",

number = "1-4",

note = "E-MRS 2005 Symposium G: ZnO and Related Materials Part 2 ; Conference date: 31-05-2005 Through 03-06-2005",

}

TY - JOUR

T1 - Characteristics of Pt Schottky contacts on hydrogen peroxide-treated n-type ZnO(0001) layers

AU - Kim, Sang Ho

AU - Kim, Han Ki

AU - Jeong, Seong Wook

AU - Seong, Tae Yeon

PY - 2006/1

Y1 - 2006/1

N2 - The effect of hydrogen peroxide (H2O2) treatment on the characteristics of Pt Schottky contacts to n-type ZnO(0001) layers (8×1016-2×1017 cm-3) has been investigated. Pt contacts on conventional organic solvent-cleaned ZnO show fairly leaky behaviour with a leakage current of -0.05 A under -5 V, while Pt contacts on H2O2-treated ZnO give good Schottky behaviour with a leakage current of -6.5×10-8 A under -5 V. Schottky barrier heights extracted from the current-voltage characteristics are in the range 0.88-0.97 eV depending on the ideality factors. Room temperature photoluminescence results show that the hydrogen peroxide treatment is fairly effective in removing deep-level defects near the ZnO surface region.

AB - The effect of hydrogen peroxide (H2O2) treatment on the characteristics of Pt Schottky contacts to n-type ZnO(0001) layers (8×1016-2×1017 cm-3) has been investigated. Pt contacts on conventional organic solvent-cleaned ZnO show fairly leaky behaviour with a leakage current of -0.05 A under -5 V, while Pt contacts on H2O2-treated ZnO give good Schottky behaviour with a leakage current of -6.5×10-8 A under -5 V. Schottky barrier heights extracted from the current-voltage characteristics are in the range 0.88-0.97 eV depending on the ideality factors. Room temperature photoluminescence results show that the hydrogen peroxide treatment is fairly effective in removing deep-level defects near the ZnO surface region.

UR - https://www.scopus.com/pages/publications/29344474486

U2 - 10.1016/j.spmi.2005.08.044

DO - 10.1016/j.spmi.2005.08.044

M3 - Conference article

AN - SCOPUS:29344474486

SN - 0749-6036

VL - 39

SP - 211

EP - 217

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1-4

T2 - E-MRS 2005 Symposium G: ZnO and Related Materials Part 2

Y2 - 31 May 2005 through 3 June 2005

ER -

Characteristics of Pt Schottky contacts on hydrogen peroxide-treated n-type ZnO(0001) layers

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