Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi2Ta2O9/Y2O3/Si structure

Ho Nyung Lee; Myoung Ho Lim; Yong Tae Kim; T. S. Kalkur; Sung Ho Choh

doi:10.1143/jjap.37.1107

Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi₂Ta₂O₉/Y₂O₃/Si structure

Ho Nyung Lee, Myoung Ho Lim, Yong Tae Kim, T. S. Kalkur, Sung Ho Choh

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

For the fabrication of metal/ferroelectric/insulator/semiconductor field effect transistors (MEFISFETs), SrBi₂Ta₂O₉ (SBT) film was formed onto Y₂O₃ layer using the metal organic deposition (MOD) method. Memory windows of MEFISFET were in the range of 0.96-1.38 V when the gate voltage varied from 5 to 7 V. Current-voltage characteristic and transconductance curve of the MEFISFET show the effective gate modulation and the stable memory effect induced by the ferroelectric properties.

Original language	English
Pages (from-to)	1107-1109
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	37
Issue number	3 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.37.1107
State	Published - Mar 1998
Externally published	Yes

Keywords

FET
Ferroelectric
Insulator
MEFIS
SrBiTaO
Thin film
YO

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10.1143/jjap.37.1107

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title = "Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi2Ta2O9/Y2O3/Si structure",

abstract = "For the fabrication of metal/ferroelectric/insulator/semiconductor field effect transistors (MEFISFETs), SrBi2Ta2O9 (SBT) film was formed onto Y2O3 layer using the metal organic deposition (MOD) method. Memory windows of MEFISFET were in the range of 0.96-1.38 V when the gate voltage varied from 5 to 7 V. Current-voltage characteristic and transconductance curve of the MEFISFET show the effective gate modulation and the stable memory effect induced by the ferroelectric properties.",

keywords = "FET, Ferroelectric, Insulator, MEFIS, SrBiTaO, Thin film, YO",

author = "Lee, {Ho Nyung} and Lim, {Myoung Ho} and Kim, {Yong Tae} and Kalkur, {T. S.} and Choh, {Sung Ho}",

year = "1998",

month = mar,

doi = "10.1143/jjap.37.1107",

language = "English",

volume = "37",

pages = "1107--1109",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing",

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TY - JOUR

T1 - Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi2Ta2O9/Y2O3/Si structure

AU - Lee, Ho Nyung

AU - Lim, Myoung Ho

AU - Kim, Yong Tae

AU - Kalkur, T. S.

AU - Choh, Sung Ho

PY - 1998/3

Y1 - 1998/3

N2 - For the fabrication of metal/ferroelectric/insulator/semiconductor field effect transistors (MEFISFETs), SrBi2Ta2O9 (SBT) film was formed onto Y2O3 layer using the metal organic deposition (MOD) method. Memory windows of MEFISFET were in the range of 0.96-1.38 V when the gate voltage varied from 5 to 7 V. Current-voltage characteristic and transconductance curve of the MEFISFET show the effective gate modulation and the stable memory effect induced by the ferroelectric properties.

AB - For the fabrication of metal/ferroelectric/insulator/semiconductor field effect transistors (MEFISFETs), SrBi2Ta2O9 (SBT) film was formed onto Y2O3 layer using the metal organic deposition (MOD) method. Memory windows of MEFISFET were in the range of 0.96-1.38 V when the gate voltage varied from 5 to 7 V. Current-voltage characteristic and transconductance curve of the MEFISFET show the effective gate modulation and the stable memory effect induced by the ferroelectric properties.

KW - FET

KW - Ferroelectric

KW - Insulator

KW - MEFIS

KW - SrBiTaO

KW - Thin film

KW - YO

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DO - 10.1143/jjap.37.1107

M3 - Article

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SN - 0021-4922

VL - 37

SP - 1107

EP - 1109

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3 SUPPL. B

ER -

Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi₂Ta₂O₉/Y₂O₃/Si structure

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Keywords

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